ESD of Multiply Charged Ions from SiO2: A Search for Mechanisms
We report ESD of singly- and multiply-charged substrate species (Si+, Si2+, Si3+, O+, O2+, and SiO+) and adsorbed species (H+ and F+) from thermally grown SiO2 and from quartz. We have measured ion yields Y(E) and energy distribution curves (EDCs) for electron energies E between 100 and 5000 eV. Y(E) curves have onsets related to the Si2p and O1s thresholds, but do not follow core ionization cross sections. EDCs of Si ions are a few eV wide, while those of O+ and H+ have tails extending to >25 eV. The results suggest ESD is initiated by Auger decay from a core hole in the presence of additional electronic excitations.
KeywordsElectron Beam Current Core Hole Auger Decay Core Excitation Energy Distribution Curve
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