Abstract
We review the new experimental observation, using high-sensitivity measurements, of laser-induced sputtering of Ga atoms from GaP, as well as existing results of laser-induced sputtering of insulators and semiconductors. Emphasis is placed on clarification of the nature of the optical transitions which ultimately cause atomic ejection. It is pointed out that transitions involving surface states are responsible for laser sputtering from GaP and that high sensitivity measurements of laser-induced sputtering are useful for characterizing the surface transitions.
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Nakai, Y., Hattori, K., Itoh, N. (1990). Studies of Laser Sputtering of GaP by Means of Resonance Ionization Spectroscopy: Response of Clean Solid Surfaces to Photo-excitation. In: Betz, G., Varga, P. (eds) Desorption Induced by Electronic Transitions DIET IV. Springer Series in Surface Sciences, vol 19. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-642-84145-3_17
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DOI: https://doi.org/10.1007/978-3-642-84145-3_17
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