Physical Properties of High-Tc Oxide Superconductors — Effect of Doping on the Electronic State

  • S. Uchida
  • H. Takagi
  • Y. Tokura
  • N. Koshihara
  • T. Arima
Part of the Springer Series in Solid-State Sciences book series (SSSOL, volume 89)


We discuss the physical meaning of the doping high T c oxides, P-type La2−x Sr x CuO4 and recently discovered N-type Nd2−x Ce x CuO4−y , based on the experimental results of the Hall effect and the plasma reflectivity spectrum. It is suggested that for light doping the Mott-Hubbard picture gives proper description of the transport properties whereas for heavy doping or for higher frequencies the Fermi lquid picture seems more appropriate for both N- and P-type materials.


Hall Coefficient Mott Insulator Plasma Edge Antiferromagnetic Order Dope Electron 
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Copyright information

© Springer-Verlag Berlin, Heidelberg 1989

Authors and Affiliations

  • S. Uchida
    • 1
  • H. Takagi
    • 1
  • Y. Tokura
    • 2
  • N. Koshihara
    • 2
  • T. Arima
    • 2
  1. 1.Engineering Research InstituteUniversity of Tokyo YayoiTokyo 113Japan
  2. 2.Department of PhysicsUniversity of TokyoHongo, Tokyo 113Japan

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