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Physical Properties of High-Tc Oxide Superconductors — Effect of Doping on the Electronic State

  • S. Uchida
  • H. Takagi
  • Y. Tokura
  • N. Koshihara
  • T. Arima
Part of the Springer Series in Solid-State Sciences book series (SSSOL, volume 89)

Abstract

We discuss the physical meaning of the doping high T c oxides, P-type La2−x Sr x CuO4 and recently discovered N-type Nd2−x Ce x CuO4−y , based on the experimental results of the Hall effect and the plasma reflectivity spectrum. It is suggested that for light doping the Mott-Hubbard picture gives proper description of the transport properties whereas for heavy doping or for higher frequencies the Fermi lquid picture seems more appropriate for both N- and P-type materials.

Keywords

Hall Coefficient Mott Insulator Plasma Edge Antiferromagnetic Order Dope Electron 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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Copyright information

© Springer-Verlag Berlin, Heidelberg 1989

Authors and Affiliations

  • S. Uchida
    • 1
  • H. Takagi
    • 1
  • Y. Tokura
    • 2
  • N. Koshihara
    • 2
  • T. Arima
    • 2
  1. 1.Engineering Research InstituteUniversity of Tokyo YayoiTokyo 113Japan
  2. 2.Department of PhysicsUniversity of TokyoHongo, Tokyo 113Japan

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