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The Shubnikov-de Haas Effect: A Powerful Tool for Characterizing Semiconductors

  • D. G. Seiler
Part of the Springer Series in Solid-State Sciences book series (SSSOL, volume 87)

Abstract

A review is given of the principles involved in using the Shubnikov-de Haas (SdH) effect to characterize three-dimensional (3D) properties of semiconductors. Extensive studies of the SdH effect have been carried out on a wide variety of semiconductors over the last three decades that prove its scientific and technological usefulness. Newly created artificially structured narrow gap materials grown by molecular beam epitaxy (MBE) often have 2D properties which can also be investigated by the SdH effect. Examples are given for MBE grown HgTe single layer films and HgTe-CdTe superlattices.

Keywords

Molecular Beam Epitaxy Landau Level Band Parameter Small Effective Mass Band Nonparabolicity 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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Copyright information

© Springer-Verlag Berlin, Heidelberg 1989

Authors and Affiliations

  • D. G. Seiler
    • 1
  1. 1.Center for Applied Quantum Electronics, Department of PhysicsUniversity of North TexasDentonUSA

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