Influence of Repulsive Scatterers on the Cyclotron Resonance in Two-Dimensional Electron Systems with Controlled Acceptor Impurity Concentration

  • H. Sigg
  • J. Richter
  • K. v. Klitzing
  • K. Ploog
Part of the Springer Series in Solid-State Sciences book series (SSSOL, volume 87)

Abstract

We review experimental results of the influence of impurities on the cyclotron resonance (CR) in two-dimensional electron systems (2DES). Using A1GaAs/GaAs samples with well-defined species and concentration of acceptor impurities we can analyze in detail several effects on the CR, e.g., filling factor dependent linewidth, strong linewidth narrowing, impurity concentration dependent shifts of the CR line position etc. We show that these effects are determined by collective properties of the random distribution of repulsive scatterers, leading to a reinterpretation of the harmonic potential model by Mikeska and Schmidt. In the light of our experiments on samples with well-defined impurities we can show, that much of the experimental CR data obtained so far even in so-called high mobility samples, are still essentially governed by the influence of impurities.

Keywords

Recombination GaAs Haas 

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Copyright information

© Springer-Verlag Berlin, Heidelberg 1989

Authors and Affiliations

  • H. Sigg
    • 1
  • J. Richter
    • 1
  • K. v. Klitzing
    • 1
  • K. Ploog
    • 1
  1. 1.Max-Planck-Institut für FestkörperforschungStuttgart 80Fed. Rep. of Germany

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