Quantum Hall Effect and Related Magneto-transport in Silicon (001) MOSFETs Under Uniaxial Stress

  • J. Lutz
  • F. Kuchar
  • G. Dorda
Conference paper
Part of the Springer Series in Solid-State Sciences book series (SSSOL, volume 87)

Abstract

The phase diagram for the population of the lowest subbands in stressed Si (001) MOSFETs is deduced from Quantum Hall effect and Shubnikov-de-Haas data. Very good qualitative agreement is found with results of the random-phase approximation by Takada and Ando.

Keywords

Kelly 

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Literature

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    T. Ando, A. B. Fowler, F. Stern: Rev. Mod. Phys. 54, 437 (1982)CrossRefGoogle Scholar
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    Y. Takada, T. Ando: I. Phys. Soc. Japan 44, 905 (1978)CrossRefGoogle Scholar
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    I. Eisele, H. Gesch, G. borda: Solid State Commun. 18, 743 (1976)CrossRefGoogle Scholar
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    M. J. Kelly, L. M. Falicov: Solid State Commun. 22, 447 (1977)CrossRefGoogle Scholar
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    H. Gesch, G. Dorda, P. Stallhofer, J. P. Kotthaus Solid State Commun. 32, 543 (1979)CrossRefGoogle Scholar

Copyright information

© Springer-Verlag Berlin, Heidelberg 1989

Authors and Affiliations

  • J. Lutz
    • 1
  • F. Kuchar
    • 1
  • G. Dorda
    • 2
  1. 1.Institut für FestkörperphysikUniversität and Ludwig Boltzmann Institut für FestkörperphysikWienAustria
  2. 2.Siemens ForschungslaboratorienMünchenFed. Rep. of Germany

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