Resonant Tunnelling Devices in a Quantising Magnetic Field
High magnetic fields, applied either parallel or perpendicular to the barriers, are extremely useful for investigating the electrical properties of resonant tunnelling structures [1–11]. By considering the current-voltage characteristics of a variety of double barrier structures (DBS) based on n-(AIGa)As/GaAs with differing well and barrier thicknesses, we show how quantising magnetic fields can be used to study tunnelling processes in which transverse momentum is conserved; the charge distribution in the device, particularly the build-up of electronic charge in the quantum well at resonance; intrinsic bistability; non-resonant elastic and inelastic scattering processes which do not conserve transverse momentum; ballistic transport involving electrons tunnelling into hybrid magneto-electric states of wide quantum wells.
KeywordsReverse Bias Landau Level Resonant Tunnelling Applied Voltage Versus Double Barrier Structure
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