Two-Dimensional Magnetoplasmons in Gated AlxGa1−xAs-GaAs Heterojunctions
The magnetoplasmon dispersion of inversion electrons in gated AlxGa1−xAs-GaAs heterojunctions is investigated at high magnetic fields (B≲12T) and low electron densities (0<Ns<4·1011cm −2) in transmission with Fourier spectroscopy. The magnetoplasmon resonance position at B≳2.5T is well described by the classical local dispersion. Magnetoplasmon resonance line shape anomalies are discussed in terms of a magnetic field dependent line width partially caused by an inhomogeneous surface charge density.
KeywordsFilling Factor Gate Voltage Cyclotron Resonance High Magnetic Field Fractional Quantum Hall Effect
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