The H-Band Luminescence of p-Type GaAs-(GaAl)As Heterostructures in High Magnetic Fields

  • W. Ossau
  • T. L. Kuhn
  • E. Bangert
  • G. Weimann
Conference paper
Part of the Springer Series in Solid-State Sciences book series (SSSOL, volume 87)


We have investigated p-type GaAs-(GaAl)As heterojunctions by low temperature photoluminescence experiments in magnetic fields up to 9.5 T. The H-band luminescence splits in two well resolved lines denoted as e- and d-line respectively. From the energy shift and the splitting-behaviour, we conclude that the a-line is emitted by the recombination of a (3D)-flat-band electron with a (2D)-hole confined in an excited subband near the interface. In the case of the d-line the electron stems from a donor.


Magnetic Field Strength Energy Shift Conduction Band Electron Excitation Density Luminescence Line 
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Copyright information

© Springer-Verlag Berlin, Heidelberg 1989

Authors and Affiliations

  • W. Ossau
    • 1
  • T. L. Kuhn
    • 1
  • E. Bangert
    • 1
  • G. Weimann
    • 2
  1. 1.Physikalisches InstitutUniversität WürzburgWürzburgFed. Rep. of Germany
  2. 2.Walter Schottky InstitutTechnischen Universität MünchenGarchingFed. Rep. of Germany

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