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Connection Between Low and High Temperature Magneto-transport Measurements in GaAs/GaAlAs Heterojunctions

  • T. Rötger
  • G. J. C. L. Bruls
  • J. C. Maan
  • P. Wyder
  • K. Ploog
  • G. Weimann
Conference paper
Part of the Springer Series in Solid-State Sciences book series (SSSOL, volume 87)

Abstract

Magnetotransport measurements in several GaAs/GaAIAs heterojunctions show a linear magnetoresistance at 30K <T<120K. At lower temperatures where the quantum Hall effect is observed the magnetoresistance is found to be proportional to the magnetic field times the derivative of the Hall voltage with respect to the field, which can be seen as the extension of the linear magnetoresistance to the quantum regime. A relation between Hall voltage and magnetoresistance valid for all samples and temperatures is given.

Keywords

Quantum Hall Effect Quantum Oscillation Hall Resistance Quantum Regime Hall Voltage 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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Copyright information

© Springer-Verlag Berlin, Heidelberg 1989

Authors and Affiliations

  • T. Rötger
    • 1
  • G. J. C. L. Bruls
    • 1
  • J. C. Maan
    • 1
  • P. Wyder
    • 1
  • K. Ploog
    • 2
  • G. Weimann
    • 3
  1. 1.Max-Planck-InstitutGrenoble CedexFrance
  2. 2.Max-Planck-Institut für FestkörperforschungStuttgart 80Fed. Rep. of Germany
  3. 3.ForschungsinstitutDeutschen Bundespost beim Fernmeldetechnischen ZentralamtDarmstadtFed. Rep. of Germany

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