p-Type GaAs-(GaAI)As Heterostructures in Tilted Magnetic Fields: Theory and Experiments

  • W. Heuring
  • E. Bangert
  • G. Landwehr
  • G. Weimann
  • W. Schlapp
Conference paper
Part of the Springer Series in Solid-State Sciences book series (SSSOL, volume 87)

Abstract

In a p-type GaAs-(GaAl)As-heterostructure the inversion symmetry is broken giving rise to a complex subband structure. If a strong magnetic field is applied perpendicular to the interface, a complicated set of Landau levels (LLs) arises. The single levels have no longer a well defined spin character and level crossing can occur. This has been confirmed by magnetoresistance experiments [1]. In a magnetic field perpendicular to the interface well resolved Shubnikov-de Haas oscillations can be observed at temperatures below 1K. The complex oscillatory patterns are well explained by the LL calculations performed by Bangert [2]. In order to put the model to a more stringent test, magneto-resistance measurements were performed in which a substantial longitudinal magnetic field was present. For a comparison with theory the previous calculations were extended by incorporating both a parallel and a transverse component of the magnetic field.

Keywords

GaAs Haas 

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References

  1. 1.
    G. Remenyi, G. Landwehr, W. Heuring In: High Mâgnetic Fields in Semiconductor Physics, ed. by G. Landwehr, p. 166 (Springer 1987 )Google Scholar
  2. 2.
    E. Bangert, G. Landwehr: Surf. Sci. 170, 593 (1986)CrossRefGoogle Scholar

Copyright information

© Springer-Verlag Berlin, Heidelberg 1989

Authors and Affiliations

  • W. Heuring
    • 1
  • E. Bangert
    • 1
  • G. Landwehr
    • 1
  • G. Weimann
    • 2
  • W. Schlapp
    • 3
  1. 1.Physikalisches Institut der Universität WürzburgWürzburgFed. Rep. of Germany
  2. 2.Walter-Schottky-InstitutGarchingFed. Rep. of Germany
  3. 3.Forschungsinstitut der Deutschen BundespostDarmstadtFed. Rep. of Germany

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