Electron Solid Formation at a Modulation Doped Heterojunction in a High Magnetic Field
By means of a radiofrequency spectroscopy experiment which tests for shear rigidity by detecting a gapless magneto-phonon excitation branch, we are able to affirm that electrons at a high quality modulation doped GaAs/GaAℓAs heterojunction form a solid at low temperatures and high fields. We determine the phase diagram for Wigner-Seitz to Bohr radius ratio 1.6 < rs < 2.5; extrapolating it gives a zero temperature critical Landau level filling factor v = 0.24 ± 0.05 and an infinite field melting temperature slightly lower, but of the same density dependence, as that for the classical Coulomb solid.
KeywordsShear Rigidity Fractional Quantum Hall Effect Classical Coulomb Modulation Dope Electric Field Threshold
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