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Electron Solid Formation at a Modulation Doped Heterojunction in a High Magnetic Field

  • F. I. B. Williams
  • D. C. Glattli
  • G. Deville
  • B. Etienne
  • E. Paris
  • E. Y. Andrei
Conference paper
Part of the Springer Series in Solid-State Sciences book series (SSSOL, volume 87)

Abstract

By means of a radiofrequency spectroscopy experiment which tests for shear rigidity by detecting a gapless magneto-phonon excitation branch, we are able to affirm that electrons at a high quality modulation doped GaAs/GaAℓAs heterojunction form a solid at low temperatures and high fields. We determine the phase diagram for Wigner-Seitz to Bohr radius ratio 1.6 < rs < 2.5; extrapolating it gives a zero temperature critical Landau level filling factor v = 0.24 ± 0.05 and an infinite field melting temperature slightly lower, but of the same density dependence, as that for the classical Coulomb solid.

Keywords

Shear Rigidity Fractional Quantum Hall Effect Classical Coulomb Modulation Dope Electric Field Threshold 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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Copyright information

© Springer-Verlag Berlin, Heidelberg 1989

Authors and Affiliations

  • F. I. B. Williams
    • 1
  • D. C. Glattli
    • 1
  • G. Deville
    • 1
  • B. Etienne
    • 2
  • E. Paris
    • 2
  • E. Y. Andrei
    • 3
  1. 1.Service de Physique du Solide et de Résonance MagnétiqueCEN-SaclayGif-sur-Yvette CedexFrance
  2. 2.Laboratoire de Microstructure et de MicroélectroniqueCNRSBagneuxFrance
  3. 3.Department of PhysicsRutgers UniversityPiscatawayUSA

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