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Different Behaviour of Integral and Fractional Quantum Hall Plateaus in GaAs-AlxGa1−xAs Heterostructures Under Back-Gating and Illumination

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High Magnetic Fields in Semiconductor Physics II

Part of the book series: Springer Series in Solid-State Sciences ((SSSOL,volume 87))

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Abstract

We measured the Shubnikov-de Haas resistivity of a 2-dimensional electron-gas (2DEG) in GaAs/A1GaAs heterojunctions and compared measurements in which for the same sample the electron density was increased to the same value either by back-gating or illumination. The electron-impurity interaction is different in these two cases. We observed that the integral and fractional Quantum-Hall (QH) plateaus behave quite differently in these two cases. We conclude that the integral Quantum-Hall Effect (IQHE) becomes stronger for stronger electron-impurity interaction while the fractional Quantum-Hall Effect (FQHE) is destroyed. This is consistent with the idea that the IQHE is due to electron-impurity interaction while the FQHE is based on electron-electron interaction.

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References

  1. R.J. Haug, K. v. Klitzing and K. Ploog, Phys. Rev. B35, 5933 (1987)

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  3. P.M. Koenraad, F.A.P. Blom, C.T. Foxon, G. Weimann and J.H. Wolter, to be published.

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Authors and Affiliations

  1. Eindhoven University of Technology, P.O. Box 513, NL-5600 MB, Eindhoven, The Netherlands

    P. M. Koenraad, F. A. P. Bloom, J. P. Cuypers & J. H. Wolter

  2. Philips Research Laboratories, Redhill, Surrey, RH1 5HA, UK

    C. T. Foxon

  3. High Field Magnet Laboratory, Toemooiveld, NL-6525 ED, Nijmegen, The Netherlands

    J. A. A. J. Perenboom & S. J. R. M. Spermon

Authors
  1. P. M. Koenraad
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  2. F. A. P. Bloom
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  3. J. P. Cuypers
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  4. C. T. Foxon
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  5. J. A. A. J. Perenboom
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  6. S. J. R. M. Spermon
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  7. J. H. Wolter
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Editor information

Editors and Affiliations

  1. Physikalisches Institut, Universität Würzburg, Am Hubland, D-8700, Wüzburg, Fed. Rep. of Germany

    Gottfried Landwehr

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© 1989 Springer-Verlag Berlin, Heidelberg

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Koenraad, P.M. et al. (1989). Different Behaviour of Integral and Fractional Quantum Hall Plateaus in GaAs-AlxGa1−xAs Heterostructures Under Back-Gating and Illumination. In: Landwehr, G. (eds) High Magnetic Fields in Semiconductor Physics II. Springer Series in Solid-State Sciences, vol 87. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-642-83810-1_24

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  • DOI: https://doi.org/10.1007/978-3-642-83810-1_24

  • Publisher Name: Springer, Berlin, Heidelberg

  • Print ISBN: 978-3-642-83812-5

  • Online ISBN: 978-3-642-83810-1

  • eBook Packages: Springer Book Archive

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