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Different Behaviour of Integral and Fractional Quantum Hall Plateaus in GaAs-AlxGa1−xAs Heterostructures Under Back-Gating and Illumination

  • P. M. Koenraad
  • F. A. P. Bloom
  • J. P. Cuypers
  • C. T. Foxon
  • J. A. A. J. Perenboom
  • S. J. R. M. Spermon
  • J. H. Wolter
Conference paper
Part of the Springer Series in Solid-State Sciences book series (SSSOL, volume 87)

Abstract

We measured the Shubnikov-de Haas resistivity of a 2-dimensional electron-gas (2DEG) in GaAs/A1GaAs heterojunctions and compared measurements in which for the same sample the electron density was increased to the same value either by back-gating or illumination. The electron-impurity interaction is different in these two cases. We observed that the integral and fractional Quantum-Hall (QH) plateaus behave quite differently in these two cases. We conclude that the integral Quantum-Hall Effect (IQHE) becomes stronger for stronger electron-impurity interaction while the fractional Quantum-Hall Effect (FQHE) is destroyed. This is consistent with the idea that the IQHE is due to electron-impurity interaction while the FQHE is based on electron-electron interaction.

Keywords

Dilution Refrigerator Electron Density Increase 2Philips Research Laboratory Magnet Laboratory Initial Electron Density 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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References

  1. [1]
    R.J. Haug, K. v. Klitzing and K. Ploog, Phys. Rev. B35, 5933 (1987)Google Scholar
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    J.J. Harris, D.E. Lacklison, C.T. Foxon, F.M. Selten, A.M. Suckling, R.J. Nicholas and K.W.J. Barnham, Semi. Sci. Tech. 2, 783 (1987)CrossRefGoogle Scholar
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    P.M. Koenraad, F.A.P. Blom, C.T. Foxon, G. Weimann and J.H. Wolter, to be published.Google Scholar

Copyright information

© Springer-Verlag Berlin, Heidelberg 1989

Authors and Affiliations

  • P. M. Koenraad
    • 1
  • F. A. P. Bloom
    • 1
  • J. P. Cuypers
    • 1
  • C. T. Foxon
    • 2
  • J. A. A. J. Perenboom
    • 3
  • S. J. R. M. Spermon
    • 3
  • J. H. Wolter
    • 1
  1. 1.Eindhoven University of TechnologyEindhovenThe Netherlands
  2. 2.Philips Research LaboratoriesRedhill, SurreyUK
  3. 3.High Field Magnet LaboratoryNijmegenThe Netherlands

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