Abstract
Quantitative experimental results are obtained on the electronic transport in the integral quantum Hall effect in InGaAs/InP heterojunctions. Both the maximum of dρ xy /dB and the inverse of the half width for ρ xx diverge like ~T −kWe obtain k = 0.42 ± 0.04, independent of the Landau level index. These results confirm the prediction of the scaling theory that the characteristic power law behavior in the transport coefficients is a universal feature of delocalization in the integral quantum Hall effect.
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© 1989 Springer-Verlag Berlin, Heidelberg
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Wei, H.P., Tsui, D.C., Paalanen, M.A., Pruisken, A.M.M. (1989). Universality and Scaling of Electronic Transport in the Integral Quantum Hall Effect. In: Landwehr, G. (eds) High Magnetic Fields in Semiconductor Physics II. Springer Series in Solid-State Sciences, vol 87. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-642-83810-1_1
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DOI: https://doi.org/10.1007/978-3-642-83810-1_1
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