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Ausblick: Monolithisch integrierte Schaltungen auf GaAs

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GaAs-Feldeffekttransistoren

Part of the book series: Halbleiter-Elektronik ((HALBLEITER,volume 16))

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Zusammenfassung

Monolithisch integrierte Schaltungen auf GaAs haben in den Jahren seit 1980 einen äußerst raschen Aufschwung genommen. Dieses Kapitel kann daher nur einen kurzen überblick über den bis jetzt erreichten Stand (1988) bei analogen und digitalen Schaltungen geben. Ausführliche Informationen über GaAs-IS sowie über neueste Entwicklungen (optoelektronische integrierte Schaltungen, Schaltungen auf anderen III-V-Halbleitern als GaAs oder auf Schichtfolgen) sind z.B. in Tagungsbänden zu finden:

  • GaAs IC Symposium (jährlich seit 1979),

  • International Solid-State Circuits Conference,

  • Symposium on GaAs and related compounds.

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Literaturverzeichnis

  1. Courtney, W. E.: Complex permittivity of GaAs and CdTe at microwave frequencies. IEEE Trans. MTT-25 (1977) 697–701.

    Google Scholar 

  2. Pucel, R. A.: Design considerations for monolithic microwave circuits. IEEE Trans. MTT-29 (1981) 513–534.

    Google Scholar 

  3. Jahncke, J.: Höchstfrequenzeigenschaften eines GaAsMESFETs in Streifenleitungstechnik. Nachrichtentech. Z. 26 (1973) 193–240.

    Google Scholar 

  4. Wortmann, A.; Heime, K.; Beneking, H.: A new concept for microstrip-integrated GaAs Schottky diodes. IEEE Trans. ED-22 (1975) 198–200.

    Google Scholar 

  5. Allen, R. P. G.; Anteil, G. R.: Monolithic mixers for 60 to 80 GHz. Eurp. Microwave Conf. Proc. (1973) Pap. A. 15. 3.

    Google Scholar 

  6. Pengelly, R. S.; Turner, J. A.: Monolithic broad band GaAs FET amplifiers. Electron. Lett. 12 (1976) 251–252.

    Article  Google Scholar 

  7. Ristow, D.; Enders, N.; Kniepkamp, H.: A monolithic GaAs Schottky barrier diode mixer for 15 GHz. 8th Europ. Microwave Conf. Proc. Paris (1978) 707–711.

    Google Scholar 

  8. Archer, J. A.; Weidlich, H. P.; Pettenpaul, E.; Petz, F. A.; Huber, J.: A GaAs monolithic low-noise broadband amplifier. IEEE J. Solid State Circ. SC-16 (1981) 648–652.

    Google Scholar 

  9. Nishiuma, M.; Katsu, S.; Nagata, S.; Ohmoto, N.; Ueda, D.; Kazumara, M.; Kano, G.: A UHF GaAs multi-stage wideband amplifier with dual feedback circuits. GaAs IC Symp. (1987) 223–226.

    Google Scholar 

  10. Wang, K.-G.; Wang, S.-K.: State-of-the-art ion-implanted low-noise GaAs-MESFET’s and high-performance monolithic amplifiers. IEEE Trans. ED-34 (1987) 2610–2615.

    Google Scholar 

  11. Liu, C. S.; Wang, K. G.; Chang, C. D.: A 6–18 GHz monolithic low noise amplifier. GaAs IC Symp. (1987) 211–214.

    Google Scholar 

  12. Kim, B.; Macksey, H. M.; Tserng, H. Q.; Shih, H. D.; Camilleri, N.: Millimeter-wave monolithic GaAs power FET amplifiers. GaAs IC Symp. (1986) 61–63.

    Google Scholar 

  13. Pauley, R. G.; Asher, P. G.; Schellenberg, J. M.; Yamasaki, H.: A 2 to 40 GHz monolithic distributed amplifier. GaAs IC Symp. (1985) 15–17.

    Google Scholar 

  14. Wisseman, W. R.: Advances in GaAs monolithic power amplifiers. GaAs-IC Symp. (1985) 109–112.

    Google Scholar 

  15. Witkowski, L. G.; Zimmermann, D. E.; Brehm, G. E.; Coats, R. P.: A X-band 4,5 Watt push-pull power amplifier. GaAs IC Symp. (1985) 117–120.

    Google Scholar 

  16. Chi, T. Y.; Weng, D. C.; Chang, C. D.; Siracusa, M.: High performance monolithic power amplifier using all RIE etch process. GaAs IC Symp. (1987) 159–162.

    Google Scholar 

  17. Halladay, R.; Pavlo, A.; Crabill, C.: A 1–10 Ghz dual gate distributed power amplifier. GaAs IC Symp. (1987) 219–222.

    Google Scholar 

  18. Tserng, H. Q.; Kim, B.: A 115 GHz monolithic GaAs FET oscillator. GaAs IC Symp. (1985) 11–13.

    Google Scholar 

  19. Mahidian, M.; Honjo, K.: 11 GHz band GaAs monolithic VCO with 1/4 analog frequency divider. GaAs IC Symp. (1985) 133–136.

    Google Scholar 

  20. Chen, Y. K.; Hwang, Y. C.; Naster, R. J.; Ragonese, L. J.; Wang, R. F.: A GaAs multi-band digitally controlled 0°-360° phase shifter. GaAs IC Symp. (1985) 125–128.

    Google Scholar 

  21. Schindler, M. J.; Ayasli, Y.; Morris, A. M.; Hanes, L. K.: Monolithic 6–18 GHz 3 bit phase shifter. GaAs IC Symp. (1985) 129–132.

    Google Scholar 

  22. Holden, T. J.; Nelson, W. W.; Ho, P. T.: A monolithic 4 GHz rejection frequency converter. GaAs-IC Symp. (1987) 187–189.

    Google Scholar 

  23. Ayasli, Y.; Mozzi, R.; Reynolds, L. D.: 6–19 GHz GaAs FET transmit-receive switch. GaAs-IC Symp. (1983) 106–108.

    Google Scholar 

  24. van Tuyl, R.; Liechti, C. A.: High-speed integrated logic with GaAs MESFETs. IEEE J. Solid State Circ. SC-9 (1974) 269–276.

    Google Scholar 

  25. Liechti, C. A.; Baldwin, G. L.; Gowen, E.; Joly, R.; Namjoo, M.; Podell, A. F.: A GaAs MSI word generator operating at 5 Gbits/s data rate. IEEE Trans. ED-29 (1982) 1094–1102.

    Google Scholar 

  26. Yamamoto, R.; Higashisaka, A.; Asai, S.; Tsuji, T.; Takayama, Y.; Yano, S.: Depletion-type GaAs MSI 32b adder. Int. Solid State Circ. Conf. (1983) 40–41.

    Google Scholar 

  27. Hirayama, H.; Furutsuka, T.; Tanaka, Y.; Kaga, M.; Kanamori, M.; Takahashi, K.; Kohzu, H.; Higashisaka, A.: A CML compatible GaAs gate array. Int. Solid State Circ. Conf. (1986) 72–73 and 311.

    Google Scholar 

  28. Takada, T.; Kato, N.; Ida, M.: An 11-GHz GaAs frequency divider using source coupled FET logic. IEEE Electron Device Lett. EDL-7 (1986) 47–48.

    Google Scholar 

  29. Eden, R. C.: Capacitor Diode FET Logic ( CDFL) circuit approach for GaAs D-MESFET IC’s. GaAs IC Symp. (1984) 11–14

    Google Scholar 

  30. Jensen, J. F.; Salmon, L. G.; Deakin, D. S.; Delaney, M. J.: Ultrahigh-speed GaAs static frequency dividers. Int. Electron Dev. Meeting (1986) 476–479.

    Google Scholar 

  31. Jensen, J. F.; Mishra, U. K.; Brown, A. S.; Beaubien, R. S.; Thompson, M. A.; Jelloian, L. M.: 25 GHz static frequency dividers in AllnAs-GaInAs HEMT technology. Int. Solid-State Circ. Conf. (1988) 268–269.

    Google Scholar 

  32. Eden, R. C.; Welch, B. M.; Zucca, R.; Long, S. I.: The prospects of ultrahigh-speed VLSI GaAs digital logic. IEEE Trans. ED-26 (1979) 299–317.

    Google Scholar 

  33. Lee, F. S.; Shen, E.; Kaelin, G. R.; Welch, B. M.; Eden, R. C.; Long, S. I.: High speed LSI GaAs digital integrated circuits. GaAs IC Symp. (1980) Pap. 3.

    Google Scholar 

  34. Terada, T.; Ikawa, Y.; Kameyama, A.; Kawakyu, K.; Sasaki, T.; Kitaura, Y.; Ishida, K.; Nishikori, K.; Toyoda, N.: A 6 K GaAs gate array with a new largenoise-margin SLCF circuit. IEEE J. Solid-State Circ. SC-22 (1987) 755–761.

    Google Scholar 

  35. Jutzi, W.: Direct coupled circuits with normally-off GaAs MESFETs at 4.2 K. Arch. Elektr. Ubertrag. (AEU) 25 (1971) 595–598.

    Google Scholar 

  36. Toyoda, N.; Uchitomi, N.; Kitaura, Y.; Mochizuki, M.; Kanazawa, K.; Terada, T.; Ikawa, Y.; Hojo, A.: A 2 K-Gate Array with a WN Gate self-alignment FET process. IEEE J. Solid-State Circ. SC-20 (1985) 1043–1049.

    Google Scholar 

  37. Fa. TriQuint: Datenblätter zu Enhancement/Depletion LSI Gate Array, Sept. 87.

    Google Scholar 

  38. Kajii, K.; Watanabe, Y.; Suzuki, M.; Hanyu, I.; Kosugi, M.; Odani, K.; Mimura, T.; Abe, M.: A 40-ps high electron mobility transistor gate array. IEEE J. Solid-State Circ. 23 (1988) 485–489.

    Article  Google Scholar 

  39. Gabillard, B.; Ducourant, T.; Rocher, C.; Prost, M.; Maluenda, J.: A 200-mW GaAs 1 k SRAM with 2-ns cycle time. IEEE J. Solid-State Circ. SC-22 (1987) 693–698.

    Google Scholar 

  40. Sheng, N. H.; Wang, H. T.; Lee, S. J.; Lee, C. P.; Sullivan, G. J.; Miller, D. L.: A high-speed high electron mobility transistor static RAM. GaAs IC Symp. (1986) 97–100.

    Google Scholar 

  41. Notomi, S.; Awano, Y.; Kosugi, M.; Nagata, T.; Kosemura, K.; Ono, M.; Kobayashi, N.; Ishiwara, H.; Odani, K.; Mimura, T.; Abe, M.: A high speed 1 k x 4-Bit static RAM using 0,5 pm-gate HEMT. GaAs IC Symp. (1987) 177–180.

    Google Scholar 

  42. Kawata. H.; Onodera, H.; Shindei, T.; Yokoyama, N.; Nishi, H.: Through-A1N implantation technology for 1,7 ns GaAs 4 k x 1 b SRAM. Conf. Solid State Devices and Mat., Tokyo (1985) 409–412.

    Google Scholar 

  43. Notthoff, G. K.; Krein, R. B.; Stephens, J. S.; Troeger, G. L.; Vogelsang, C. H.; Hyun, C. H.: A 4 kx 1 Bit complementary E-JFET static RAM. GaAs IC Symp. (1987) 185–188.

    Google Scholar 

  44. Hirayama, M.; Togashi, M.; Kato, N.; Suzuki, M.; Matsuoka, Y.; Kawasaki, Y.: A GaAs 16-kbit static RAM using dislocation-free crystal. IEEE Trans. ED-33 (1986) 104–110.

    Google Scholar 

  45. Kellner, W.: Digitale GaAs-Schaltkreise: Stand und Perspektiven. mikroelektronik 1 (1987) 64–67.

    Google Scholar 

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Authors and Affiliations

  1. Zentrale Forschung und Entwicklung der Siemens AG, München, Deutschland

    Dr. phil. Walter Kellner (Fachgruppenleiter) & Dipl.-Phys. Hermann Kniepkamp (Fachabteilungsleiter)

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  1. Dr. phil. Walter Kellner
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  2. Dipl.-Phys. Hermann Kniepkamp
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© 1989 Springer-Verlag Berlin, Heidelberg

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Kellner, W., Kniepkamp, H. (1989). Ausblick: Monolithisch integrierte Schaltungen auf GaAs. In: GaAs-Feldeffekttransistoren. Halbleiter-Elektronik, vol 16. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-642-83576-6_8

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  • DOI: https://doi.org/10.1007/978-3-642-83576-6_8

  • Publisher Name: Springer, Berlin, Heidelberg

  • Print ISBN: 978-3-540-50193-0

  • Online ISBN: 978-3-642-83576-6

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