Abstract
The electrical properties of a series of double barrier tunnelling devices with well widths between 5 and 60 nm are investigated. It is shown that the bistability effect in the current-voltage characteristics of a typical resonant tunnelling device can be removed by connecting a suitable capacitance or resistance to the device. These measurements cast serious doubt on the recent interpretation of the bistability as an intrinsic space-charge effect. In the stabilized section of the I(V) curve, at voltages above the main resonant peak, the magnetoquantum oscillations observed with B‖J are used to investigate tunnelling assisted by LO phonon emission and by elastic scattering processes. The resonant tunnelling device with well width 60 nm exhibits sixteen regions of negative differential conductivity. The effect of a transverse magnetic field J⊥B on the resonances in the I(V) characteristics is investigated. At sufficiently high magnetic field, a transition from tunnelling into hybrid magneto-electric quantised states to tunnelling into magnetically quantised cycloidal skipping states is observed.
This is a preview of subscription content, log in via an institution to check access.
Access this chapter
Tax calculation will be finalised at checkout
Purchases are for personal use only
Preview
Unable to display preview. Download preview PDF.
References
V. J. Goldman, D. C. Tsui and J. E. Cunningham, Phys. Rev. Lett. 58, 1256 (1987)
T. C. L. G. Sollner, Phys. Rev. Lett. 59, 1622 (1987).
See also C. A. Payling, E. Alves, L. Eaves, T. J. Foster, M. Henini, O. H. Hughes, P. E. Simmonds, J. C. Portal, G. Hill and M. A. Pate, Proc. 3rd Int. Conf. on Modulated Semiconductor Structures, Montpellier, France. J. Physique C5, 289 (1987).
G. A. Toombs, E. S. Alves, L. Eaves, T. J. Foster,. Henini, O. H. Hughes, M. L. Leadbeater, C. A. Payling, F. W. Sheard, P. A. Claxton, G. Hill, M. A. Pate and J. C. Portal, 14th Int. Symposium on Gallium Arsenide and Related Compounds, Crete, 1987. To be published by Institute of Physics.
V. J. Goldman, D. C. Tsui and J. E. Cunningham, Phys. Rev. B35, 9387 (1987).
F. W. Sheard and G. A. Toombs, Appl. Phys. Lett., to be published, April 1988.
V. J. Goldman, D. C. Tsui and J. E. Cunningham, Phys. Rev. B36, 7635 (1987). See also Proc. 3rd Int. Conf. on Modulated Semiconductor Structures, Montpellier, France. J. Physique C5, 467 (1987).
L. Eaves, G. A. Toombs, F. W. Sheard, C. A. Payling, M. L. Leadbeater, E. S. Alves, T. J. Foster, P. E. Simmonds, M. Henini and O. H. Hughes, Appl. Phys. Lett. 52, 212 (1988).
B. R. Snell, K. S. Chan, F. W. Sheard, L. Eaves, G. A. Toombs, D. K Maude, J. C. Portal, S. J. Bass, P. Claxton, G. Hill and M. A. Pate, Phys. Rev. Lett. 59, 2806 (1987).
Author information
Authors and Affiliations
Editor information
Editors and Affiliations
Rights and permissions
Copyright information
© 1988 Springer-Verlag Berlin Heidelberg
About this paper
Cite this paper
Eaves, L. et al. (1988). Magnetic Field Studies of Resonant and Non-resonant Tunnelling in n-(AlGa)As/GaAs Double Barrier Structures. In: Heinrich, H., Bauer, G., Kuchar, F. (eds) Physics and Technology of Submicron Structures. Springer Series in Solid-State Sciences, vol 83. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-642-83431-8_8
Download citation
DOI: https://doi.org/10.1007/978-3-642-83431-8_8
Publisher Name: Springer, Berlin, Heidelberg
Print ISBN: 978-3-642-83433-2
Online ISBN: 978-3-642-83431-8
eBook Packages: Springer Book Archive