Abstract
Ion protection lithography (IPL) uses demagnifying ion optics to project open stencil mask structures onto a substrate with reduced (.. 5x, 10x, ..) scale [1]. The IPL technique offers high throughput potential by using duoplasmatron ion sources with high angular current densities [2] and with virtual source sizes of less than 10 pm. Thus, for organic resists, chip exposure times of ≤ 0.1 sec are easily obtained.
Access this chapter
Tax calculation will be finalised at checkout
Purchases are for personal use only
Preview
Unable to display preview. Download preview PDF.
References
G. Stengl, H. Löschner, J. J. Muray, Solid State Technol. 29(2), 119 (1986)
G. Stengl, H. Löschner, W. Maurer, P. Wolf, J. Vac. Sci. Technol. 4(1), 194 (1986)
G. Stengl, H. Löschner, E. Hammel, E.D. Wolf, J.J. Muray, NATO Workshop on Emerging Technologies for In Situ Processing, Corsica, May 4–8, 1987, in press (North-Holland)
L.-M. Buchmann, L. Csepregi, K.P. Muller, A. Chalupka, E. Hammel, H. Löschner, G. Stengl, 32nd Int. Symp. Electron, Ion and Photon Beams, May 31 - June 3, 1988, Ft. Lauderdale, FL, t.b.p. J. Vac. Sci. Technol.
R. Fischer, E. Hammel, H. Löschner, G. Stengl, P. Wolf, Microelectronic Engineering 5, 193 (North-Holland, 1986 )
G. Stengi, H. Löschner, P. Wolf, Nucl. Instr. Meth. in Phys. Res. B19/20, 987 (1987)
C.W.„Slayman, J.L. Bartelt, C.M. McKenna, Proc. SPIE Vol. 333, 68 (1982)
S.W. Pang, T.M. Lyszcarz. C.L. Chen, J.P. Donnelly, J.N. Randall, J. Vac. Sci. Technol. B5(1), 215 (1987)
G. Stengl, H. Löschner, E. Hammel, E.D. Wolf, Proc. 17th European Solid State Device Research Conf., ESSDERC’87, Bologna, Sept. 14–17, 1987, p. 625 (t.b.p. North-Holland)
G. Stangl, E. Cekan, E. Hammel, W. Fallmann, 5th Int. Winterschool on New Developments in Solid State Physics: Physics and Technology of Submicron Structures, Mauterndorf, Salzburg, Austria, Febr. 22–26, 1988, these Proceedings.
E-beam metrology measurements were done by H. Noll, W. Kräuter and M. Strmsek at Austria Micro Systems International GmbH, Unterpremstätten, Austria.
A. Heuberger, L.-M. Buchmann, L. Csepregi, K.P. Muller, Microelectronic Engineering 6, 333 (1987)
J. Meingailis, J. Vac. Sci. Technol. B5(1), 469 (1987)
G. Stengl, H. Löschner, J.J. Muray, Techn. Proc. SEMICON/ West 1986, p. 42 ( SEMI Inc., Mountain View, CA, 1986 )
G. Stengl, H. Löschner, J.J. Muray, Ext. Abstr. 18th Int. Conf. Solid State Devices and Materials, Tokyo, 29 (1986)
Author information
Authors and Affiliations
Editor information
Editors and Affiliations
Rights and permissions
Copyright information
© 1988 Springer-Verlag Berlin Heidelberg
About this paper
Cite this paper
Stengl, G., Löschner, H., Hammel, E. (1988). Progress in Ion Projection Lithography. In: Heinrich, H., Bauer, G., Kuchar, F. (eds) Physics and Technology of Submicron Structures. Springer Series in Solid-State Sciences, vol 83. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-642-83431-8_6
Download citation
DOI: https://doi.org/10.1007/978-3-642-83431-8_6
Publisher Name: Springer, Berlin, Heidelberg
Print ISBN: 978-3-642-83433-2
Online ISBN: 978-3-642-83431-8
eBook Packages: Springer Book Archive