Abstract
During the past several years many studies have been made on the conductance of quasi-one-dimensional MOSFET systems [1–13]. Related physics has also been explored in GaAs structures [14–16]. One of the key reasons that one would like to use either the MOSFET system or the heteiojunction system for these studies is that the Fermi energy is controllable in these systems by the appropriate application of voltage biases or by charging effects. This gives the experimenter a very important parameter to vary in order to understand the proper description of the physics.
This is a preview of subscription content, log in via an institution to check access.
Access this chapter
Tax calculation will be finalised at checkout
Purchases are for personal use only
Preview
Unable to display preview. Download preview PDF.
References
A.B. Fowler, A. Hartstein and R.A. Webb: Phys. Rev. Lett. 48 196 (1982)
R.G. Wheeler, K. K. Choi, A. Goel, R. Wisnieff and D. E. Prober: Phys. Rev. Lett. 49 1674 (1982)
W.J. Skocpol, L.D. Jacket, E.L. Hu, R.E. Howard and L.A. Fetter: Phys. Rev. Lett. 49, 951 (1982)
R.R. Kwasnick, M.A. Kastner, J. Melngalis and P.A. Lee: Phys. Rev. Lett. 52 224 (1984)
R.G. Wheeler, K.K. Choi and R. Wisnieff: Surf. Sci. 142, 19 (1984)
W.J. Skoepol, L.D. Jackel, R.E. Howard, H.G. Craighead, L.A. Fetter, P.M. Mankiwich, P. Grabbe and D.M. Tennant: Surf. Sci. 142, 14 (1984)
C.C. Dean and M. Pepper: J. Phys. C 17, L1287 (1982)
A. Hartstein, R. A. Webb, A. B. Fowler and J. J. Wainer: Surf. Sci. 142, 1 (1984)
R.A. Webb, A. Hartstein, J.J. Wainer and A.B. Fowler: Phys. Rev. Lett. 54 1577 (1985)
J.C. Licini, D.J. Bishop, M.A. Kastner and J. Melngailis: Phys. Rev. Lett. 55, 2987 (1985)
S.B. Kaplan and A. Hartstein: Phys. Rev. Lett. 56, 2403 (1986)
W.H. Skocpol, P.M. Mankiewich, R.E. Howard, L.D. Jackel, D.M. Tennant and A.D. Stone: Phys. Rev. Lett. 55, 2865 (1986)
K.S. Rails, W.J. Skocpol, L.D. Jackal, R.E. Howard, L.A. Fetter, R.W. Epworth and D.M. Tennant: Phys. Rev. Lett. 52, 228 (1984)
P.C. Main, L. Eaves, R.P. Taylor, G.P. Whittington, S. Thorns, S.P. Beaumont and C.D.W. Wilkinson: In The Physics of Semiconductors, ed. Olof Engstrom, 1591 ( World Scientific, Singapore 1986 )
G. Timp, A.M. Chang, P. Mankiewich, R. Behringer, J.E. Cunningham, T.Y. Chang and R.E. Howard: Phys. Rev. Lett. 59. 732 (1987)
G. Timp, A.M. Chang, J.E. Cunningham, T.Y. Chang, P. Mankiewich, R. Behringer and R.E. Howard: Phys. Rev. Lett. 58, 2814 (1987)
D. Vollhardt and P. Wolfle: Phys. Rev. Lett. 45 842 (1980)
P.A. Lee: Phys. Rev. Lett. 53, 2042 (1984)
M. Ya. Azbel and P. Soven: Phys. Rev. B 27 831 (1983)
M. Ya Azbel, A. Hartstein and D.P. DiVicenzo: Phys. Rev. Lett. 52, 1641 (1984)
M. Ya Azbel and D.P. Divicenzo: Phys. Rev. B 30, 6877 (1984)
A.D. Stone and P.A. Lee: Phys. Rev. Lett. 54, 1196 (1985)
A.B. Fowler, G.L. Timp, J.J. Wainer and R.A. Webb: Phys. Rev. Lett. 57, 138 (1986)
Author information
Authors and Affiliations
Editor information
Editors and Affiliations
Rights and permissions
Copyright information
© 1988 Springer-Verlag Berlin Heidelberg
About this paper
Cite this paper
Hartstein, A. (1988). Physics of One-Dimensional MOSFETs. In: Heinrich, H., Bauer, G., Kuchar, F. (eds) Physics and Technology of Submicron Structures. Springer Series in Solid-State Sciences, vol 83. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-642-83431-8_22
Download citation
DOI: https://doi.org/10.1007/978-3-642-83431-8_22
Publisher Name: Springer, Berlin, Heidelberg
Print ISBN: 978-3-642-83433-2
Online ISBN: 978-3-642-83431-8
eBook Packages: Springer Book Archive