Abstract
With submicron lithography it is possible to prepare narrow inversion channels at semiconductor interfaces, in which electrons can move freely only in one direction. For experiments on such quasi-one-dimensional (1D) systems we employ AlGaAs/GaAs heterojunctions with a laterally micro-structured gates electrode. A negative gate bias is used to deplete parallel channels in the originally homogeneous two-dimensional (2D) inversion layer and thus cause a transition from 2D to 1D electronic behavior. Quantum oscillatons of the magnetoresistance as well as far infrared spectroscopy of the electronic excitations are used to characterize the transition from 2D to 1D behavior. From such experiments and with simple models we can derive 1D subband spacings, 1D electron densities and effective channel widths. Also, we can estimate the importance of many-body effects on the directly observed intersubband resonance transition between 1D subbands.
This is a preview of subscription content, log in via an institution to check access.
Access this chapter
Tax calculation will be finalised at checkout
Purchases are for personal use only
Preview
Unable to display preview. Download preview PDF.
References
for a review see: T. Ando, A.B. Fowler, and F. Stern, Rev. Mod. Phys. 54, 437 (1982)
A. C. Warren, D. A. Antoniadis, and H. I. Smith Phys. Rev. Lett. 56, 1858 (1986)
T. P. Smith, III, H. Arnot, J. M. Hong, C. M. Knoedler, S. E. Laux and H. Schmid, Phys. Rev. Lett. 59, 2802 (1987)
K.-F. Berggren, T. J. Thornton, D. J. Newson, and M. Pepper Phys. Rev. Lett. 57, 1769 (1986)
H. van Houten, B. J. van Wees, J. E. Mooij, G. Roos, and K.-F. Berggren, Superlattices and Microstructures, in press
J. Cibert, P. M. Petroff, G. J. Dolan, S. J. Pearton, A. C. Cossard, and J. H. English, Appl. Phys. Lett. 49, 1275 (1986)
M. A. Reed, J. N. Randall, R. J. Aggarwal, R. J. Matyi, T. M. Moore, and A. E. Wetsel, Phys. Rev. Lett. 60, 535 (1988)
W. Hansen, M. Horst, J. P. Kotthaus, U. Merkt, Ch. Sikorksi, and K. Ploog, Phys. Rev. Lett. 58, 2586 (1987)
W. Hansen, Ph. D. thesis, Univ. Hamburg, 1987
J. P. Kotthaus, W. Hansen, H. Pohlmann, M. Wassermeier, and K. Ploog, Surf. Sci., in press (1988).
F. Brinkop, W. Hansen, J.P. Kotthaus, and K. Ploog, Phys.Rev. B in press
S. J. Allen, Jr., H. L. Störmer, and J.C.M. Hwang, Phys. Rev. B28, 4875 (1983)
S. J. Allen, F. DeRosa, G. H. Dolan, and C. W. Tu: In Proceedings of the 17th Intern. Conf. on the Physics of Semiconductors, ed. by J. D. Chadi and W. A. Harrison, ( Springer, New York 1985 ) p. 313
W. Hansen, J. P. Kotthaus, A. V. Chaplik, and K. Ploog: In High Magnetic Fields in Semiconductor Physics, ed. by G. Landwehr, ( Springer, Berlin 1987 ) p. 266
K. Ploog, Ann. Rev. Mater. Sci. 11, 171 (1981).
D. Heitmann: In Two-Dimensional Systems: Physics and New Devices, Ed. by G. Bauer, F. Kuchar, and H. Heinrich (Springer Berlin 1986 ) p. 285
W.-Y. Lai and S. Des Sarma, Phys. Rev. B33, 8874 (1986).
S. E. Laux and F. Stern, Appl. Phys. Lett. 49, 91 (1986).
U. Wulf, Phys. Rev. B35, 9754 (1987)
F. Stern, Surf. Sci., in press (1988)
U. Mackens, D. Heitmann, L. Prager, J. P. Kotthaus and W. Beinvogl, Phys. Rev. Lett. 53, 1485 (1984).
M. V. Krasheninnikov and A. V. Chaplik, Soy. Phys. Semicond. 15, 19 (1981).
W.-Y. Lai, A. Kobayashi, and S. Das Sarma, Phys. Rev. B34, 7380 (1986).
E. Batke, D. Heitmann, J. P. Kotthaus, and K. Ploog, Phys. Rev. Lett. 54, 2367 (1985)
J. Alsmeier, Ch. Sikorski, and U. Merkt, Phys. Rev. B, in press
S. Das Sarma and W.-Y. Lai, Phys. Rev. B32, 1401 (1985)
Author information
Authors and Affiliations
Editor information
Editors and Affiliations
Rights and permissions
Copyright information
© 1988 Springer-Verlag Berlin Heidelberg
About this paper
Cite this paper
Hansen, W., Kotthaus, J.P. (1988). Quasi-One-Dimensional Electron Channels in AlGaAs/GaAs Heterojunctions. In: Heinrich, H., Bauer, G., Kuchar, F. (eds) Physics and Technology of Submicron Structures. Springer Series in Solid-State Sciences, vol 83. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-642-83431-8_17
Download citation
DOI: https://doi.org/10.1007/978-3-642-83431-8_17
Publisher Name: Springer, Berlin, Heidelberg
Print ISBN: 978-3-642-83433-2
Online ISBN: 978-3-642-83431-8
eBook Packages: Springer Book Archive