Abstract
The conductance of very small silicon metal-oxide-semiconductor field-effect transistors (MOSFETs) contains aperiodic structure known as universal conductance fluctuations. Fluctuations of nearly the same amplitude are observed when either the magnetic field or the gate voltage is varied. Structure in the magnetoconductance of inversion and accumulation layers is correlated for closely spaced values of the Fermi energy. The period of magnetoconductance fluctuations for samples tilted in a magnetic field is dependent on the perpendicular component of the applied field. When the source-drain voltage across the device is increased, the conductance becomes increasingly asymmetric until the fluctuation amplitude is decreased by electron heating. The role of quantum interference and disorder in causing these phenomena will be discussed.
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Kaplan, S.B. (1988). Universal Fluctuations and Conductance Asymmetry in Mesoscopic Silicon MOSFETs. In: Heinrich, H., Bauer, G., Kuchar, F. (eds) Physics and Technology of Submicron Structures. Springer Series in Solid-State Sciences, vol 83. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-642-83431-8_14
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DOI: https://doi.org/10.1007/978-3-642-83431-8_14
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