Ion Implantation of Polythiophene
Polythiophene as a free-standing film has been ion implanted with F+ -ions having 25 keV energy. A rapid conductivity increase starts at doses between 5·1015…5 .10 16 F+/cm2. The conductivity changes by 6 orders of magnitude being 1.10−2 Ω−crn−1 at a highest dose of 1·1017 F + /cm2. RBS spectra show that a 0.35...0.40 μm surface layer is damaged. The increasing conductivity is accompanied by a decrease in its activation energy and the optical energy gap at room temperature.
KeywordsPoly Thiophene Host Polymer Optical Transmission Spectrum Doping Method Maximum Beam Current
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- 1.T. Wada, A. Takeno, M. Iwaki, H. Sasabe, Y. Kobayashi: J. Chem. Soc. Chem. Commun., 1194 (1985).Google Scholar
- 4.P. Kuivalainen, H. Stubb, H. Isotalo, P. Yli-Lahti, C. Holmström: Phys. Rev. B31., 7900 (1985).Google Scholar
- 5.F. Namavar, J.I. Budnik: Nucl. Instr. and Meth. B15, 285 (1986).Google Scholar