Ion Implantation of Polythiophene

  • H. Isotalo
  • H. Stubb
  • J. Saarilahti
Conference paper
Part of the Springer Series in Solid-State Sciences book series (SSSOL, volume 76)

Abstract

Polythiophene as a free-standing film has been ion implanted with F+ -ions having 25 keV energy. A rapid conductivity increase starts at doses between 5·1015…5 .10 16 F+/cm2. The conductivity changes by 6 orders of magnitude being 1.10−2 Ωcrn1 at a highest dose of 1·1017 F + /cm2. RBS spectra show that a 0.35...0.40 μm surface layer is damaged. The increasing conductivity is accompanied by a decrease in its activation energy and the optical energy gap at room temperature.

Keywords

Graphite Shrinkage Thiophene Lene Poly Thiophene 

Preview

Unable to display preview. Download preview PDF.

Unable to display preview. Download preview PDF.

Literature

  1. 1.
    T. Wada, A. Takeno, M. Iwaki, H. Sasabe, Y. Kobayashi: J. Chem. Soc. Chem. Commun., 1194 (1985).Google Scholar
  2. 2.
    J. Bartko, B.O. Hall, K.F. Schoch Jr.: J. Appl. Phys 59, 1111 (1986).CrossRefGoogle Scholar
  3. 3.
    J.E. ÜJsterholm, P. Passiniemi, H. Isotalo, H. Stubb: Synth. Metals 18, 213(1987).CrossRefGoogle Scholar
  4. 4.
    P. Kuivalainen, H. Stubb, H. Isotalo, P. Yli-Lahti, C. Holmström: Phys. Rev. B31., 7900 (1985).Google Scholar
  5. 5.
    F. Namavar, J.I. Budnik: Nucl. Instr. and Meth. B15, 285 (1986).Google Scholar

Copyright information

© Springer-Verlag Berlin Heidelberg 1987

Authors and Affiliations

  • H. Isotalo
    • 1
  • H. Stubb
    • 1
  • J. Saarilahti
    • 1
  1. 1.Technical Research Centre of FinlandSemiconductor LaboratoryEspooFinland

Personalised recommendations