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Ion Implantation of Polythiophene

  • H. Isotalo
  • H. Stubb
  • J. Saarilahti
Conference paper
Part of the Springer Series in Solid-State Sciences book series (SSSOL, volume 76)

Abstract

Polythiophene as a free-standing film has been ion implanted with F+ -ions having 25 keV energy. A rapid conductivity increase starts at doses between 5·1015…5 .10 16 F+/cm2. The conductivity changes by 6 orders of magnitude being 1.10−2 Ωcrn1 at a highest dose of 1·1017 F + /cm2. RBS spectra show that a 0.35...0.40 μm surface layer is damaged. The increasing conductivity is accompanied by a decrease in its activation energy and the optical energy gap at room temperature.

Keywords

Poly Thiophene Host Polymer Optical Transmission Spectrum Doping Method Maximum Beam Current 
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Copyright information

© Springer-Verlag Berlin Heidelberg 1987

Authors and Affiliations

  • H. Isotalo
    • 1
  • H. Stubb
    • 1
  • J. Saarilahti
    • 1
  1. 1.Technical Research Centre of FinlandSemiconductor LaboratoryEspooFinland

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