Semiconductor Microwave Devices

  • W. Harth
Conference paper


There is an evergrowing interest and demand in microwave systems for communications and radar applications. The consequence is a rapid progress in research and development for powerful transmitter- and low noise amplifier-semiconductor devices, especially in view to push the frontiers to higher and higher frequencies. In this review only semiconductor devices are treated which operate above 1 GHz, with emphasize on new developments for mm-waves. To stay within the scope of this paper, mainly the state of the art of solitary III–V compound semiconductor microwave devices will be presented which presently experience an impetuous development in research and technology.


High Electron Mobility Transistor Heterojunction Bipolar Transistor IEDM Tech Pseudomorphic High Electron Mobility Transistor Minimum Noise Figure 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.


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Copyright information

© Springer-Verlag Berlin, Heidelberg 1987

Authors and Affiliations

  • W. Harth
    • 1
  1. 1.Lehrstuhl für Allgemeine Elektrotechnik und Angewandte ElektronikTechnische Universität MünchenMünchen 2Germany

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