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Semiconductor Microwave Devices

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Microwave Applications

Abstract

There is an evergrowing interest and demand in microwave systems for communications and radar applications. The consequence is a rapid progress in research and development for powerful transmitter- and low noise amplifier-semiconductor devices, especially in view to push the frontiers to higher and higher frequencies. In this review only semiconductor devices are treated which operate above 1 GHz, with emphasize on new developments for mm-waves. To stay within the scope of this paper, mainly the state of the art of solitary III–V compound semiconductor microwave devices will be presented which presently experience an impetuous development in research and technology.

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References

  1. Kräutle, H.: Implanted planar GaInAsP/InP heterobipolar transistor. Electron. Lett. 22 (1986) 1191–1193

    Article  Google Scholar 

  2. Ishibashi, T., Yamauchi, Y., Nakajima, O., Nagata, K. and Ito, H.: Self-aligned A1GaAs/GaAs heterojunction bipolar transistors for high-speed digital circuits. IEDM Tech. Dig. (1986) 809–810

    Google Scholar 

  3. Agrawal, K.K.: Dielectric resonator oscillators using GaAs/GaA1As heterojunction bipolar transistors. IEEE MTT-S International Microwave Symposium, Baltimore (1986) 95–98

    Google Scholar 

  4. Kim, B., Macksey, H.M. Tserng, H.Q., Shih, H.D. and Camilleri, N.: Millimeter-wave monolithic GaAs power FET amplifiers.GaAs IC Symposium Digest, Monterey (1985) 61–63

    Google Scholar 

  5. Drummond, T.J., Masselnik, W.T. and Morkoç, H.: Modulation doped GaAs/GaA1As heterojunction field-effect transistors: MODFETs. Proc. IEEE 79 (1986) 773–822

    Article  Google Scholar 

  6. Mimura, T., Abe, M., Shibatomi, A. and Kobayashi, M.: HEMT Technology: Potential and advance. Proc. of the 2nd Int. Conf. on Modulated Semiconductor Structures, Kyoto (1985) 521–532

    Google Scholar 

  7. Trew, R.J. and Steer, M.B.: Millimeter-wave performance of state-of-the-art MESFET, MODFET and PTB transistors. Electron. Lett. 23 (1987) 149–151

    Article  Google Scholar 

  8. Henderson, T., Aksun, M.I., Peng, C.K., Morkoç, H., Chao, P.C., Smith, P.M., Duh, K.H.G. and Lester, L.F.: Power and noise performance of the pseudomorphic modulation doped field effect transistor at 60 GHz. IEDM Tech. Dig. (1986) 464–466

    Google Scholar 

  9. Fujitsu announcement, Microwave Jour. Dec. (1986) 13

    Google Scholar 

  10. Debney, B.T. and Joshi, J.S.: A theory of noise in GaAs FET microwave oscillators and its experimental verification. IEEE Trans. Electron. Dev. ED-30 (1983) 769–776

    Google Scholar 

  11. Leung, C.C., Snapp, C.P. and Grande, V.: A 0,5 p.m Silicon bipolar transistor for low phase noise oscillator applications up to 20 GHz. IEEE MTT-S International Microwave Symposium, Baltimore (1986) 383–387

    Google Scholar 

  12. Wake, D., Nelson, A.W., Cole, S., Wong, S., Henning, I.D. and Scott, E.G.: InGaAs/InP junction field-effect transistors with high transconductance made using metal organic vapor phase epitaxy. IEEE Electron. Dev. Lett. EDL-6 (1985) 626–627

    Google Scholar 

  13. Gardner, P.D., Narayan, S.Y., Liu, S.G., Bechtle, D., Bibby, T., Capewell, D.R. and Colvin, S.D.: InP depletion-mode microwave MISFETs. IEEE Electron. Dev. Lett. EDL-8 (1987) 45–47

    Google Scholar 

  14. Bozler, C.O.: Current prospects for the permeable base transistor. Proc. of the 2nd Int. Conf. on Modulated Semiconductor Structures, Kyoto (1985) 742–757

    Google Scholar 

  15. Bozler, C.O. and Alley, G.D.: Fabrication and numerical simulation of the permeable base transistor. IEEE Trans. Electron. Dev. ED-27 (1980) 1128–1141

    Google Scholar 

  16. Rolland, P.A.: Millimeter-wave solid state power sources. Proceedings of the Int. Workshop on Millimeter Waves, Rome (1986) 125–177

    Google Scholar 

  17. Harth, W., Claassen, M. and Freyer, J.: Si-and GaAs-Impatt diodes for millimeter waves. To be published in mikrowellen magazin, May, 1987

    Google Scholar 

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Author information

Authors and Affiliations

  1. Lehrstuhl für Allgemeine Elektrotechnik und Angewandte Elektronik, Technische Universität München, Arcisstraße 21, D-8000, München 2, Germany

    W. Harth

Authors
  1. W. Harth
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Editor information

Editors and Affiliations

  1. Institute for Microwave Technology, Technological University of Munich, Germany

    Horst Groll (Professor, Head) (Professor, Head)

  2. Institute for Medical Optics, University of Munich, Germany

    Wilhelm Waidelich (Professor, Head) (Professor, Head)

  3. Department of Applied Optics, Gesellschaft für Strahlen- und Umweltforschung, Neuherberg, Germany

    Wilhelm Waidelich (Professor, Head) (Professor, Head)

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© 1987 Springer-Verlag Berlin, Heidelberg

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Harth, W. (1987). Semiconductor Microwave Devices. In: Groll, H., Waidelich, W. (eds) Microwave Applications. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-642-83157-7_9

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  • DOI: https://doi.org/10.1007/978-3-642-83157-7_9

  • Publisher Name: Springer, Berlin, Heidelberg

  • Print ISBN: 978-3-540-18070-8

  • Online ISBN: 978-3-642-83157-7

  • eBook Packages: Springer Book Archive

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