Semiconductor Microwave Devices

  • W. Harth
Conference paper

Abstract

There is an evergrowing interest and demand in microwave systems for communications and radar applications. The consequence is a rapid progress in research and development for powerful transmitter- and low noise amplifier-semiconductor devices, especially in view to push the frontiers to higher and higher frequencies. In this review only semiconductor devices are treated which operate above 1 GHz, with emphasize on new developments for mm-waves. To stay within the scope of this paper, mainly the state of the art of solitary III–V compound semiconductor microwave devices will be presented which presently experience an impetuous development in research and technology.

Keywords

Microwave Recombination Radar Tungsten GaAs 

Preview

Unable to display preview. Download preview PDF.

Unable to display preview. Download preview PDF.

References

  1. /1/.
    Kräutle, H.: Implanted planar GaInAsP/InP heterobipolar transistor. Electron. Lett. 22 (1986) 1191–1193CrossRefGoogle Scholar
  2. /2/.
    Ishibashi, T., Yamauchi, Y., Nakajima, O., Nagata, K. and Ito, H.: Self-aligned A1GaAs/GaAs heterojunction bipolar transistors for high-speed digital circuits. IEDM Tech. Dig. (1986) 809–810Google Scholar
  3. /3/.
    Agrawal, K.K.: Dielectric resonator oscillators using GaAs/GaA1As heterojunction bipolar transistors. IEEE MTT-S International Microwave Symposium, Baltimore (1986) 95–98Google Scholar
  4. /4/.
    Kim, B., Macksey, H.M. Tserng, H.Q., Shih, H.D. and Camilleri, N.: Millimeter-wave monolithic GaAs power FET amplifiers.GaAs IC Symposium Digest, Monterey (1985) 61–63Google Scholar
  5. /5/.
    Drummond, T.J., Masselnik, W.T. and Morkoç, H.: Modulation doped GaAs/GaA1As heterojunction field-effect transistors: MODFETs. Proc. IEEE 79 (1986) 773–822CrossRefGoogle Scholar
  6. /6/.
    Mimura, T., Abe, M., Shibatomi, A. and Kobayashi, M.: HEMT Technology: Potential and advance. Proc. of the 2nd Int. Conf. on Modulated Semiconductor Structures, Kyoto (1985) 521–532Google Scholar
  7. /7/.
    Trew, R.J. and Steer, M.B.: Millimeter-wave performance of state-of-the-art MESFET, MODFET and PTB transistors. Electron. Lett. 23 (1987) 149–151CrossRefGoogle Scholar
  8. /8/.
    Henderson, T., Aksun, M.I., Peng, C.K., Morkoç, H., Chao, P.C., Smith, P.M., Duh, K.H.G. and Lester, L.F.: Power and noise performance of the pseudomorphic modulation doped field effect transistor at 60 GHz. IEDM Tech. Dig. (1986) 464–466Google Scholar
  9. /9/.
    Fujitsu announcement, Microwave Jour. Dec. (1986) 13Google Scholar
  10. /10/.
    Debney, B.T. and Joshi, J.S.: A theory of noise in GaAs FET microwave oscillators and its experimental verification. IEEE Trans. Electron. Dev. ED-30 (1983) 769–776Google Scholar
  11. /11/.
    Leung, C.C., Snapp, C.P. and Grande, V.: A 0,5 p.m Silicon bipolar transistor for low phase noise oscillator applications up to 20 GHz. IEEE MTT-S International Microwave Symposium, Baltimore (1986) 383–387Google Scholar
  12. /12/.
    Wake, D., Nelson, A.W., Cole, S., Wong, S., Henning, I.D. and Scott, E.G.: InGaAs/InP junction field-effect transistors with high transconductance made using metal organic vapor phase epitaxy. IEEE Electron. Dev. Lett. EDL-6 (1985) 626–627Google Scholar
  13. /13/.
    Gardner, P.D., Narayan, S.Y., Liu, S.G., Bechtle, D., Bibby, T., Capewell, D.R. and Colvin, S.D.: InP depletion-mode microwave MISFETs. IEEE Electron. Dev. Lett. EDL-8 (1987) 45–47Google Scholar
  14. /14/.
    Bozler, C.O.: Current prospects for the permeable base transistor. Proc. of the 2nd Int. Conf. on Modulated Semiconductor Structures, Kyoto (1985) 742–757Google Scholar
  15. /15/.
    Bozler, C.O. and Alley, G.D.: Fabrication and numerical simulation of the permeable base transistor. IEEE Trans. Electron. Dev. ED-27 (1980) 1128–1141Google Scholar
  16. /16/.
    Rolland, P.A.: Millimeter-wave solid state power sources. Proceedings of the Int. Workshop on Millimeter Waves, Rome (1986) 125–177Google Scholar
  17. /17/.
    Harth, W., Claassen, M. and Freyer, J.: Si-and GaAs-Impatt diodes for millimeter waves. To be published in mikrowellen magazin, May, 1987Google Scholar

Copyright information

© Springer-Verlag Berlin, Heidelberg 1987

Authors and Affiliations

  • W. Harth
    • 1
  1. 1.Lehrstuhl für Allgemeine Elektrotechnik und Angewandte ElektronikTechnische Universität MünchenMünchen 2Germany

Personalised recommendations