Advertisement

Laser-Induced Deposition

  • Ian W. Boyd
Part of the Springer Series in Materials Science book series (SSMATERIALS, volume 3)

Abstract

In this chapter film growth from the gas phase is described. Two main reaction modes are possible, namely, laser pyrolysis and laser photolysis. The former is closely related to traditional chemical vapour deposition, but with use of lasers significantly enhanced reaction rates can be achieved. Laser photolysis utilises selective photochemical bond-breaking, so that much reduced processing temperatures can be employed. Oxide and nitride deposition from various precursor mixtures, as well as organic polymer formation, are reviewed.

Keywords

Chemical Vapour Deposition Silicon Nitride Chemical Vapour Deposition Reaction Thermal Chemical Vapour Deposition Laser Pyrolysis 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

Preview

Unable to display preview. Download preview PDF.

Unable to display preview. Download preview PDF.

References

  1. 6.1
    W. Kern, G.L. Schnable: IEEE Trans. ED-26, 647 (1979)Google Scholar
  2. 6.2
    E.C. Douglas: Solid State Techn. 24, 65 (1981)Google Scholar
  3. 6.3
    A.C. Adams: In VLSI Technology, ed S.M. Sze (McGraw-Hill, New York 1984) p.93Google Scholar
  4. 6.4
    J.L. Vossen, W. Kern: Physics Today 33, 26 (May 1980)CrossRefADSGoogle Scholar
  5. 6.5
    H. Sankur, J.T. Cheung: J. Vac. Sci. Technol. A 1, 1806 (1983)ADSGoogle Scholar
  6. 6.6
    M. Bass, J.R. Franchi, J. Chem. Phys. 64, 4417 (1976)CrossRefADSGoogle Scholar
  7. 6.7
    W.M. Donnelly, M. Geva, J. Long, R.F. Karlicek: Appl. Phys. Lett. 44, 951 (1984)CrossRefADSGoogle Scholar
  8. 6.8
    R. Solanki, W. Ritchie, G.J. Collins: Appl. Phys. Lett. 43, 454 (1983)CrossRefADSGoogle Scholar
  9. 6.9
    H. Sankur, R.Hall: Appl. Opt. 24, 3343 (1985) and references thereinCrossRefADSGoogle Scholar
  10. 6.10
    T.F. Deutsch, D.J. Silversmith, R.W. Mountain: In Laser Diagnostics and Photochemical, Processing for Semiconductor Devices, ed. by R.M. Osgood, S.R.J. Brueck, H.R. Schlossberg (North-Holland, Amsterdam, 1983) p.129Google Scholar
  11. 6.11
    D.J. Ehrlich, R.M. Osgood, T.F. Deutsch: Appl. Phys. Lett. 39, 957 (1981)CrossRefADSGoogle Scholar
  12. 6.12
    T.Y. Sheng, L.R. Thompson, T. Hwaing, G.J. Collins: CLEO Techn. Digest (1986) p.92Google Scholar
  13. 6.13
    Y. Hirota, O. Mikami: Electron. Lett. 21, 77 (1985)CrossRefGoogle Scholar
  14. 6.14
    R. Solanki, G.J. Collins: Appl. Phys. Lett. 42, 662 (1983)CrossRefADSGoogle Scholar
  15. 6.15
    C. Arnone, M. Rothschild, J.G. Black, D.J. Ehrlich: Appl. Phys. Lett. 48, 1018 (1986)CrossRefADSGoogle Scholar
  16. 6.16
    See, for example, M. Hanabusa: Mat. Sci. Repts. 2, 51 (1987) and references thereinGoogle Scholar
  17. 6.17
    R.F. Marks, R.A. Poliak, Ph. Avouris, C.T. Lin, Y.J. Thefaine: J. Chem. Phys. 78, 4270 (1983) and references therein.CrossRefADSGoogle Scholar
  18. 6.18
    R.F. Marks, R.A. Pollack, Ph. Avouris: In Laser Diagnostics and Photochemical Processing for Semiconductor Devices, ed. by R.M. Osgood, S.R.J. Brueck, H.R. Schlossberg (North-Holland, Amsterdam 1983) p.257Google Scholar
  19. 6.19
    R.F. Marks, R.A. Pollack: J. Chem. Phys. 81, 1019 (1984)CrossRefADSGoogle Scholar
  20. 6.20
    B.J. Baliga, S.K. Ghandi: J. Appl. Phys. 44, 990 (1973)CrossRefADSGoogle Scholar
  21. 6.21
    W. Peters: Technical Digest Int’l. Electron Dev. Meeting (1981) p.240Google Scholar
  22. 6.22
    P. Dimitriou: In Dielectric Layers in Semiconductors, ed. by G.G. Bentini, E. Fogarassy, A. Golanski (Les Editions de Physique, Les Ulis 1986) p.349Google Scholar
  23. 6.23
    Y. Tarui, J. Hidaka, K. Aota: Jpn. J. Appl. Phys. 23, L827 (1984)CrossRefADSGoogle Scholar
  24. 6.24
    J.Y. Chen, R.C. Hendersen, J.T. Holland, W. Peters: J. Electrochem. Soc. 131, 2146 (1984)CrossRefGoogle Scholar
  25. 6.25
    J-I Takahashi, M. Tabe: Jpn. J. Appl. Phys. 24, 274 (1985)CrossRefADSGoogle Scholar
  26. 6.26
    Y. Mishima, M. Hirose, Y. Osaka, Y. Ashida: J. Appl. Phys. 55, 1234 (1984)CrossRefADSGoogle Scholar
  27. 6.27
    P.K. Boyer, G.A. Roche, W.H. Ritchie, G.J. Collins: Appl. Phys. Lett. 40, 716 (1982)CrossRefADSGoogle Scholar
  28. 6.28
    P.K. Boyer, K.A. Emery, H. Zarnani, G. J. Collins: Appl. Phys. Lett. 45, 979 (1984)CrossRefADSGoogle Scholar
  29. 6.29
    S. Nishino, H. Honda, H. Matsunami: Jpn. J. Appl. Phys. 25, L87 (1986)CrossRefADSGoogle Scholar
  30. 6.30
    S. Szikora, W. Krauter, D. Bäuerle: Mat. Lett. 2, 263 (1984)CrossRefGoogle Scholar
  31. 6.31
    A.Sugimura, M. Hanabusa: Jpn. J. Appl. Phys. 26, L56 (1987)CrossRefADSGoogle Scholar
  32. 6.32
    P.K. Boyer, C.A. Moore, R. Solanki, W.K. Ritchie, G.A. Roche, G.J. Collins: In Laser Diagnostics and Photochemical, Processing for Semiconductor Devices, ed. by R.M. Osgood, S.R.J. Brueck, H.R. Schlossberg (North-Holland, Amsterdam, 1983) p.119Google Scholar
  33. 6.33
    R. Padmanabhan, B.J. Miller: J. Vac. Sci. Technol. A 4, 363 (1986)ADSGoogle Scholar
  34. 6.34
    K. Tamagawa, T. Hayashi, S. Komiya: Jpn. J. Appl. Phys. 25, L728 (1986)CrossRefADSGoogle Scholar
  35. 6.35
    H. Sankur: SPIE 459, 78 (1984)Google Scholar
  36. 6.36
    J.T. Yardley, A. Gupta, G. West, K.W. Beeson: In Laser Chemical Processing of Semiconductor Devices, ed. by F.A. Houle, T.F. Deutsch, R.M. Osgood, Extended Abstracts of Symp. B (MRS, Pittsburgh 1984) p.121Google Scholar
  37. 6.37
    Y. Kizaki, T. Kandori, Y. Fujitani: Jpn. J. Appl. Phys. 24, 800 (1985)CrossRefADSGoogle Scholar
  38. 6.38
    J.Y. Tsao, D.J. Ehrlich: Appl. Phys. Lett. 42, 997 (1983)CrossRefADSGoogle Scholar
  39. 6.39
    D.J. Ehrlich, J.Y. Tsao: J. Vac. Sci. Technol. Bl, 969 (1983)Google Scholar
  40. 6.40
    D.J. Ehrlich, J.Y. Tsao: Appl. Phys. Lett. 46, 198 (1985)CrossRefADSGoogle Scholar

Recommendation for Further Reading

  1. Leonberger F.J., C.H. Lee, H. Morkoc, F. Capasso (eds.): Picosecond Electronics and Optoelectronics II, Springer Ser. Electron. Photon., Vol.24 (Springer, Berlin, Heidelberg 1987)Google Scholar
  2. Mourou G.A., D.M. Bloom, C.-H. Lee (eds.): Picosecond Electronics and Optoelectronics, Springer Ser. Electrophys., Vol.21 (Springer, Berlin, Heidelberg 1985)Google Scholar
  3. Källbäck B., H. Beneking (eds.): High-Speed Electronics, Springer Ser. Electron. Photon., Vol.22 (Springer, Berlin, Heidelberg 1986)Google Scholar
  4. Le Lay G., J. Derrien, N. Boccara (eds.): Semiconductor Interfaces: Formation and Properties, Springer Proc. Phys., Vol.22 (Springer, Berlin, Heidelberg 1987)Google Scholar
  5. Vossen J.L., W. Kern: Thin Film Processes (Academic, New York 1978)Google Scholar

Copyright information

© Springer-Verlag Berlin Heidelberg 1987

Authors and Affiliations

  • Ian W. Boyd
    • 1
  1. 1.Department of Electronic and Electrical EngineeringUniversity College LondonLondonUK

Personalised recommendations