How Strong Are Resonant Polaron Effects in 2D and 3D Semiconductor Systems?

  • F. Malcher
  • G. Lommer
  • U. Rössler
Conference paper
Part of the Springer Series in Solid-State Sciences book series (SSSOL, volume 71)

Abstract

Deviations of the cyclotron resonance energy from ħωB=ħeB/m*c, where m* is the bulk electron mass, are calculated for bulk GaAs and AlGaAs/GaAs heterostructures and compared with previous theoretical and experimental results. We find that the resonant magneto-polaron effect becomes significant at higher magnetic fields in 2D than in 3D systems.

Keywords

GaAs 

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Copyright information

© Springer-Verlag Berlin Heidelberg 1987

Authors and Affiliations

  • F. Malcher
    • 1
  • G. Lommer
    • 1
  • U. Rössler
    • 1
  1. 1.Institut für Theoretische PhysikUniversität RegensburgRegensburgFed. Rep. of Germany

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