Energy Relaxation of Hot Carriers in GaAs in a Strong Magnetic Field Studied with Picosecond Photoluminescence

  • R. W. J. Hollering
  • T. T. J. M. Berendschot
  • H. J. A. Bluyssen
  • H. A. J. M. Reinen
  • P. Wyder
Conference paper
Part of the Springer Series in Solid-State Sciences book series (SSSOL, volume 71)

Abstract

Energy relaxation by optical phonon emission of photoexcited carriers in bulk GaAs has been studied previously by cw and timeresolved picosecond spectroscopy [1]. In the picosecond experiments substantial deviations were observed between calculated and experimentally determined energy relaxation rates, which were ascribed to screening of the carrier-phonon interaction by the high carrier density [2,3] and generation of a nonequilibrium optical phonon distribution [4].

Keywords

Recombination GaAs Onic 

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References

  1. 1.
    For a review see J. Shah: J. Phys. (Paris) 42C-7, 445 (1981)Google Scholar
  2. 2.
    W. Graudzus and E.O. Goebel: Physica (Utrecht) 117B+118B, 555 (1978)Google Scholar
  3. 3.
    E.J. Yoffa: Phys. Rev. B21, 2145 (1980)Google Scholar
  4. 4.
    W. Poetz and P. Kocevar: Phys. Rev. B28, 7040 (1983)ADSGoogle Scholar
  5. 5.
    R.W.J. Hollering, T.T.J.M. Berendschot, H.J.A. Bluyssen, P. Wyder, M. Leys, J. Wolter: Solid State Commun. 57, 527 (1986)CrossRefADSGoogle Scholar
  6. 6.
    R.W.J. Hollering, T.T.J.M. Berendschot, H.J.A. Bluyssen, P. Wyder, M. Leys, J. Wolter: Physica (Amsterdam) 134B+C, 422 (1985)ADSGoogle Scholar
  7. 7.
    S. Tanaka, H. Kobayashi, H. Saito and S. Shionoya: J. Phys. Soc. Jpn. 49, 1051 (1980)CrossRefADSGoogle Scholar
  8. 8.
    For a discussion on Landau level broadening see: L.M. Roth and P.N. Argyres: Semiconductor and Semimetals, Vol. 1 (Academic Press Inc., London 1966)Google Scholar
  9. 9.
    R. Dingle: Proc. R. Soc. London A 211, 517 (1962)ADSMathSciNetGoogle Scholar
  10. 10.
    R. Smetsers and H.J.A. Bluyssen: to be published in Semicond. Science and TechnologyGoogle Scholar
  11. 11.
    R. Kubo, N. Hashitsume and S.J. Miyake: Solid State Phys. 17, 269 (1966)CrossRefGoogle Scholar
  12. 12.
    A. Mooradian, G.B. Wright: Solid State Commun. 4, 431 (1966)CrossRefADSGoogle Scholar
  13. 13.
    G. Bauer, H. Kahlert and P. Kocevar: Phys. Rev. B11, 968 (1975)ADSGoogle Scholar
  14. 14.
    M. Pugnet, J. Collet and A. Cornet: Solid State Commun. 38, 531 (1981)CrossRefADSGoogle Scholar
  15. 15.
    C.H. Yang and S.A. Lyon: Physica (Amsterdam) 134B+C, 309 (1985)ADSGoogle Scholar

Copyright information

© Springer-Verlag Berlin Heidelberg 1987

Authors and Affiliations

  • R. W. J. Hollering
    • 2
  • T. T. J. M. Berendschot
    • 1
  • H. J. A. Bluyssen
    • 1
  • H. A. J. M. Reinen
    • 1
  • P. Wyder
    • 3
  1. 1.Research Institute for MaterialsUniversity of NijmegenNijmegenThe Netherlands
  2. 2.Philips Reserach LaboratoriesEindhovenThe Netherlands
  3. 3.Max-Planck-Institut für FestkörperforschungHochfeld-MagnetlaborGrenoble CedexFrance

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