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Energy Relaxation of Hot Carriers in GaAs in a Strong Magnetic Field Studied with Picosecond Photoluminescence

  • R. W. J. Hollering
  • T. T. J. M. Berendschot
  • H. J. A. Bluyssen
  • H. A. J. M. Reinen
  • P. Wyder
Conference paper
Part of the Springer Series in Solid-State Sciences book series (SSSOL, volume 71)

Abstract

Energy relaxation by optical phonon emission of photoexcited carriers in bulk GaAs has been studied previously by cw and timeresolved picosecond spectroscopy [1]. In the picosecond experiments substantial deviations were observed between calculated and experimentally determined energy relaxation rates, which were ascribed to screening of the carrier-phonon interaction by the high carrier density [2,3] and generation of a nonequilibrium optical phonon distribution [4].

Keywords

Landau Level Bulk GaAs Photoexcited Carrier High Carrier Density Optical Phonon Emission 
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Copyright information

© Springer-Verlag Berlin Heidelberg 1987

Authors and Affiliations

  • R. W. J. Hollering
    • 2
  • T. T. J. M. Berendschot
    • 1
  • H. J. A. Bluyssen
    • 1
  • H. A. J. M. Reinen
    • 1
  • P. Wyder
    • 3
  1. 1.Research Institute for MaterialsUniversity of NijmegenNijmegenThe Netherlands
  2. 2.Philips Reserach LaboratoriesEindhovenThe Netherlands
  3. 3.Max-Planck-Institut für FestkörperforschungHochfeld-MagnetlaborGrenoble CedexFrance

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