Advertisement

Recent High-Field Work on Diluted Magnetic Semiconductors

  • P. A. Wolff
  • D. Heiman
  • E. D. Isaacs
  • P. Becla
  • S. Foner
  • L. R. Ram-Mohan
  • D. H. Ridgely
  • K. Dwight
  • A. Wold
Conference paper
Part of the Springer Series in Solid-State Sciences book series (SSSOL, volume 71)

Abstract

Magnetic polarons are ferromagnetic spin clusters created by the exchange interaction of a carrier spin (electron or hole) with localized spins embedded in a semiconductor lattice. They were first studied in magnetic semiconductors [1]; more recently, there have been extensive investigations [2] of polaron behavior in diluted magnetic semiconductors (DMS), such as Cd1-xMnxTe. DMS are favorable media for magnetic polaron studies because they have simple s-p bands, excellent optical properties, and can be grown in large single crystals. Two types of magnetic polarons have been identified in DMS — the bound magnetic polaron (BMP), whose carrier is localized by an impurity [3], and the free polaron (FP) consisting of a carrier trapped by its own, self-consistently-maintained, exchange potential [4].

Preview

Unable to display preview. Download preview PDF.

Unable to display preview. Download preview PDF.

Bibliography

  1. 1.
    See E. Nagaev, Physics of Magnetic Semiconductors (MIR Publishers, Moscow, 1983).Google Scholar
  2. 2.
    P. Wolff and J. Warnock, J. Appl. Phys. 55, 2300 (1984).CrossRefADSGoogle Scholar
  3. 3.
    A. Golnik, J. 6aj, M. Nawrocki, R. Planel, and C. Benoit á la Guillaume, Proc. XV Intl. Conf. Phys. Semiconductors, Kyoto, 1980 (J. Phys. Soc. Japan, Suppl. A49, pg. 819); M. Nawrocki, R. Planel, G. Fishman and R. Galazka, ibid, pg. 823.Google Scholar
  4. 4.
    A. Golnik, J. Ginter and J. Gaj, J. Phys. C16, 6073 (1983).ADSGoogle Scholar
  5. 5.
    T. Dietl and J. Spalek, Phys. Rev. Letters 48, 355 (1982)CrossRefADSGoogle Scholar
  6. 5a.
    T. Dietl and J. Spalek, Phys. Rev. B28, 1548 (1983)ADSGoogle Scholar
  7. 5b.
    D. Heiman, P. Wolff, and J. Warnock, Phys. Rev B27, 4848 (1983).ADSGoogle Scholar
  8. 6.
    T. Nhung and R. Planel, Proc. XVI Intl. Conf. Phys. of Semiconductors, Montpellier, Physica 117B - 118B, 488 (1980)Google Scholar
  9. 7.
    T. Kasuya, A. Yanase, and T. Takeda, Sol. State Comm. 8, 1543 (1970).CrossRefADSGoogle Scholar
  10. 8.
    D. Heiman, E.D. Isaacs, P. Becla, and S. Foner (to be published); D. Heiman, E.D. Isaacs, S. Foner, A. Wold, K. Dwight, and D. Ridgely (to be published).Google Scholar
  11. 9.
    J. Zayhowski, Ph.D. Thesis, MIT, 1985.Google Scholar
  12. 10.
    J. Spalek, Phys. Rev. B30, 5345 (1984).ADSGoogle Scholar
  13. 11.
    W. Schafer and R. Nitsche, Mat. Res. Bull. 9, 645 (1974).CrossRefGoogle Scholar

Copyright information

© Springer-Verlag Berlin Heidelberg 1987

Authors and Affiliations

  • P. A. Wolff
    • 1
  • D. Heiman
    • 1
  • E. D. Isaacs
    • 1
  • P. Becla
    • 1
  • S. Foner
    • 1
  • L. R. Ram-Mohan
    • 2
  • D. H. Ridgely
    • 3
  • K. Dwight
    • 3
  • A. Wold
    • 3
  1. 1.Francis Bitter National Magnet LaboratoryMITCambridgeUSA
  2. 2.Worcester Polytechnic InstituteWorcesterUSA
  3. 3.Brown UniversityProvidenceUSA

Personalised recommendations