Magnetic Field Induced Metal-Nonmetal Transition in GaAs-GaAlAs Heterostructures with a Spacer

  • A. Raymond
  • J. L. Robert
  • C. Bousquet
Conference paper
Part of the Springer Series in Solid-State Sciences book series (SSSOL, volume 71)


The metal-nonmetal transition in GaAs-GaAlAs heterostructures has been investigated by transport experiments in the presence of a magnetic field and hydrostatic pressure. The binding energy of magnetodonors, composed of donor atoms in the doped layer of Ga1-xAlxAs and electrons in GaAs separated from one another by a spacer, has been determined as a function of magnetic field for different surface densities controlled by the pressure. A simple model is presented which accounts qualitatively for the observed effects.


Hydrostatic Pressure High Magnetic Field Donor Atom Surface Electron Critical Magnetic Field 
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  1. 1.
    J.L. Robert, A. Raymond, L. Konczewicz, C. Bousquet, W. Zawadzki, F. Alexandre, I.M. Masson, J.P. André P.M. Frijlink: Phys. Rev. B33, 5935 (1986)ADSGoogle Scholar
  2. 2.
    L. Esaki, R. Tsu: IBM Research Note RC 2418 (1969)Google Scholar
  3. 3.
    R. Dingle, H.L. Stormer, A.C. Gossard, W. Wiegmann: Appl. Phys. Lett. 33, 665 (1978)CrossRefADSGoogle Scholar
  4. 4.
    H.L. Störmer, R. Dingle, A.C. Gossard, W. Wiegmann, M.D. Sturge: Solid State Commun. 29, 705 (1979)CrossRefADSGoogle Scholar
  5. 5.
    A. Raymond: Proc. Int. Conf. “The Application of High Magnetic Fields in Semiconductor Physics”. Grenoble 1982. Lecture Notes in Physics, Vol. 177 (Springer-Verlag, Berlin, Heidelberg (1983) p.344; J.L. Robert, A. Raymond, R.L. Aulombard, C. Bousquet, Philos. Mag. B42, 1003 (1980)Google Scholar
  6. 6.
    N. Chand, T. Henderson, J. Klem, W.T. Masselink, R. Fischer, Y.C. Chang, H. Morkoc: Phys. Rev. B 30, 4481 (1984)CrossRefADSGoogle Scholar
  7. 7.
    A.K. Saxena: J. Phys. C. 13, 4323 (1980)CrossRefADSGoogle Scholar
  8. 8.
    H.J. Lee, L.Y. Juravel, J.C. Woolley: Phys. Rev. B21, 659 (1980)ADSGoogle Scholar
  9. 9.
    A.K. Saxena: Appl. Phys. Lett. 36, 79 (1980)CrossRefADSGoogle Scholar
  10. 10.
    R.J. Nelson: Appl. Phys. Lett. 31, 351 (1977)CrossRefADSGoogle Scholar
  11. 11.
    J.M. Mercy, C. Bousquet, J.L. Robert, A. Raymond, G. Gregoris, J. Beerens, J.C. Portal, P.M. Frijlink, P. Delescluse, J. Chevrier, N.T. Linh: Surf. Sci. 142, 298 (1984)CrossRefADSGoogle Scholar
  12. 12.
    E.E. Mendez, M. Heiblum, L.L. Chang, L. Esaki: Phys. Rev. B28, 4486 (1983)ADSGoogle Scholar
  13. 13.
    G. Bastard (private communication).Google Scholar
  14. 14.
    Y. Yafet, R.W. Keyes, E.N. Adams: J. Phys. Chem. Solids, 1, 137 (1956)CrossRefADSGoogle Scholar
  15. 15.
    W. Zawadzki, M. Kubisa: to be published.Google Scholar

Copyright information

© Springer-Verlag Berlin Heidelberg 1987

Authors and Affiliations

  • A. Raymond
    • 1
  • J. L. Robert
    • 1
  • C. Bousquet
    • 1
  1. 1.Groupe d’Etude des Semiconducteurs (Associé au CRNS no. UA357)Université des Sciences et Techniques du LanguedocMontpellierFrance

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