Abstract
The metal-nonmetal transition in GaAs-GaAlAs heterostructures has been investigated by transport experiments in the presence of a magnetic field and hydrostatic pressure. The binding energy of magnetodonors, composed of donor atoms in the doped layer of Ga1-xAlxAs and electrons in GaAs separated from one another by a spacer, has been determined as a function of magnetic field for different surface densities controlled by the pressure. A simple model is presented which accounts qualitatively for the observed effects.
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Raymond, A., Robert, J.L., Bousquet, C. (1987). Magnetic Field Induced Metal-Nonmetal Transition in GaAs-GaAlAs Heterostructures with a Spacer. In: Landwehr, G. (eds) High Magnetic Fields in Semiconductor Physics. Springer Series in Solid-State Sciences, vol 71. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-642-83114-0_58
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DOI: https://doi.org/10.1007/978-3-642-83114-0_58
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