Resonant 2D Magnetopolarons in Accumulation Layers on n-Hg0.8Cd0.2Te
Cyclotron resonance (CR) measurements on accumulation-layer electrons at anodic oxide films n-(Hg,Cd) Te are reported. Up to six subband cyclotron resonances are observed, and discontinuities are seen in the subband effective masses, due to resonant polaron effects. The coupling is strongest for the higher (i = 3,4,5 ) subbands, where it is enhanced over that for the bulk, and occurs at the “HgTe-like” LO phonon frequency. The behaviour of the lowest, deeply bound (i = 0,1) subbands is more complex, with the coupling being weaker and the dominant interaction seeming to occur at the To frequency for low values of Ns. The behaviour of the accumulation layer electrons is thus rather similar to the recently reported resonant 2D magnetopolarons observed in a variety of III-V heterostructures: in high carrier concentration (and hence heavily-screened) heterojunctions, the dominant interaction was at the TO phonon frequency, whereas in low carrier concentration quantum wells, the coupling occurred at the LO phonon frequency [1,2 ]
KeywordsGaAs Haas Onic HgTe
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