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High Magnetic Fields in Semiconductor Physics pp 282–285Cite as

Radiative Recombination of Two-Dimensional Electrons with Nonequilibrium Holes in Si MOS-Structures

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Part of the book series: Springer Series in Solid-State Sciences ((SSSOL,volume 71))

Abstract

It has been shown that radiative recombination spectra of 2D-electrons with nonequilibrium holes in p-(001) Si MOS-structures can be used as an effective tool for the investigation of the 2D-density of states under applied magnetic field. Oscillations of the Landau level width with electron occupation have been found.

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References

  1. I.V. Kukushkin, V.B. Timofeev, Pis’ma Zh. Eksp. Teor. Fiz. (JEPT Lett.) 1984, 40, 413

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  2. I.V. Kukushkin, V.B. Timofeev, Zh. Eksp. Teor. Fiz. (JEPT), in press, 1986.

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  3. I.V. Kukushkin, V.B. Timofeev, Pis’ma Zh. Eksp. Teor. Fiz. (JEPT Lett.), 1986, 43, 387

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  4. T. Ando, Y. Murayama, Proc. of the 17th Int. Conf. on the Physics of Semiconductors, San Francisco 1984, J.D. Chadi and W.A. Harrison, Eds. Springer Verlag 1985, p. 317.

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Author information

Authors and Affiliations

  1. Institute of Solid State Physics, Academy of Sciences of the USSR, 142432, Chernogolovka, USSR

    I. V. Kukushkin & V. B. Timofeev

Authors
  1. I. V. Kukushkin
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  2. V. B. Timofeev
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Editor information

Editors and Affiliations

  1. Physikalisches Institut, Universität Würzburg, Röntgenring 8, D-8700, Würzburg, Fed. Rep.of Germany

    Gottfried Landwehr

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© 1987 Springer-Verlag Berlin Heidelberg

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Kukushkin, I.V., Timofeev, V.B. (1987). Radiative Recombination of Two-Dimensional Electrons with Nonequilibrium Holes in Si MOS-Structures. In: Landwehr, G. (eds) High Magnetic Fields in Semiconductor Physics. Springer Series in Solid-State Sciences, vol 71. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-642-83114-0_42

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  • DOI: https://doi.org/10.1007/978-3-642-83114-0_42

  • Publisher Name: Springer, Berlin, Heidelberg

  • Print ISBN: 978-3-642-83116-4

  • Online ISBN: 978-3-642-83114-0

  • eBook Packages: Springer Book Archive

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