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Electrons in a Random Potential and Strong Magnetic Field: Lowest Landau Level

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High Magnetic Fields in Semiconductor Physics

Part of the book series: Springer Series in Solid-State Sciences ((SSSOL,volume 71))

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Abstract

In this review the properties of two-dimensional independent electrons in a strong perpendicular magnetic field and a random potential are considered in the lowest Landau level. For the density of states of point scatterers an exact expression exists. For the d.c. conductivity and the inverse participation ratio series expansions in the Green’s functions are available. They yield an estimate for the d.c. conductivity in the band centre and for the exponent which describes the vanishing of the inverse participation ratio in the band centre.

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References

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Author information

Authors and Affiliations

  1. Institut für Theoretische Physik, Ruprecht-Karls-Universität, D-6900, Heidelberg 1, Fed. Rep.of Germany

    F. Wegner

Authors
  1. F. Wegner
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Editor information

Editors and Affiliations

  1. Physikalisches Institut, Universität Würzburg, Röntgenring 8, D-8700, Würzburg, Fed. Rep.of Germany

    Gottfried Landwehr

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© 1987 Springer-Verlag Berlin Heidelberg

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Wegner, F. (1987). Electrons in a Random Potential and Strong Magnetic Field: Lowest Landau Level. In: Landwehr, G. (eds) High Magnetic Fields in Semiconductor Physics. Springer Series in Solid-State Sciences, vol 71. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-642-83114-0_4

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  • DOI: https://doi.org/10.1007/978-3-642-83114-0_4

  • Publisher Name: Springer, Berlin, Heidelberg

  • Print ISBN: 978-3-642-83116-4

  • Online ISBN: 978-3-642-83114-0

  • eBook Packages: Springer Book Archive

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