Electronic Excitations in Laterally Microstructured AlGaAs-GaAs Heterojunctions

  • W. Hansen
  • J. P. Kotthaus
  • A. Chaplik
  • K. Ploog
Part of the Springer Series in Solid-State Sciences book series (SSSOL, volume 71)


The far infrared transmission of laterally periodical microstructured GaAs heterojunctions is investigated at low temperature (T=2K) and in high magnetic fields (B<12T). At B=OT a well-defined resonance is observed that increases in frequency with increasing magnetic field. Position and strength of this resonance are discussed in terms of depolarization and quantization in wire grid structures.


Magnetic Field Dependence Resonance Position Parallel Polarization Wire Grid Resonance Amplitude 
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Copyright information

© Springer-Verlag Berlin Heidelberg 1987

Authors and Affiliations

  • W. Hansen
    • 1
  • J. P. Kotthaus
    • 1
  • A. Chaplik
    • 1
    • 3
  • K. Ploog
    • 2
  1. 1.Institut für Angewandte PhysikHamburg 36Fed. Rep. of Germany
  2. 2.Max-Planck-Institut für FestkörperforschungStuttgart 80Fed. Rep. of Germany
  3. 3.Institute of Semiconductor PhysicsNovosibirsk 90USSR

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