Electronic Excitations in Laterally Microstructured AlGaAs-GaAs Heterojunctions
The far infrared transmission of laterally periodical microstructured GaAs heterojunctions is investigated at low temperature (T=2K) and in high magnetic fields (B<12T). At B=OT a well-defined resonance is observed that increases in frequency with increasing magnetic field. Position and strength of this resonance are discussed in terms of depolarization and quantization in wire grid structures.
KeywordsMagnetic Field Dependence Resonance Position Parallel Polarization Wire Grid Resonance Amplitude
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