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Tunneling Cyclotron Resonance in Semiconductor Superlattices

  • S. J. AllenJr.
  • T. Duffield
  • R. Bhat
  • M. Koza
  • M. C. Tamargo
  • J. P. Harbison
  • F. DeRosa
  • D. M. Hwang
  • P. Grabbe
  • K. M. Rush
Conference paper
Part of the Springer Series in Solid-State Sciences book series (SSSOL, volume 71)

Abstract

One of the more remarkable achievements in the field of materials science has been the growth of semiconductor single crystals atomic layer by atomic layer. By varying the composition along the growth direction a very great degree of control can be exercised over semiconductor doping and bandgaps. Although the scientific understanding and technological development of these materials has been unusually rapid, the early vision[1] that focused on the engineering of bulk, 3-dimensional, bandstructures has been largely forsaken in favor of properties that emerge due to confinement of the electron states to the two dimensions of a single layer.

Keywords

Growth Direction Cyclotron Resonance Landau Level Cyclotron Energy Superlattice Period 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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Copyright information

© Springer-Verlag Berlin Heidelberg 1987

Authors and Affiliations

  • S. J. AllenJr.
    • 1
    • 2
  • T. Duffield
    • 1
    • 2
  • R. Bhat
    • 1
  • M. Koza
    • 1
  • M. C. Tamargo
    • 1
  • J. P. Harbison
    • 1
  • F. DeRosa
    • 1
  • D. M. Hwang
    • 1
  • P. Grabbe
    • 1
  • K. M. Rush
    • 1
  1. 1.Bell Communications Research, Inc.RedbankUSA
  2. 2.Francis Bitter National Magnet LaboratoryMassachusetts Institute of TechnologyCambridgeUSA

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