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Fractional Quantum Hall Effect of p-Type GaAs-(GaAl)As Heterostructures in the Millikelvin Range

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High Magnetic Fields in Semiconductor Physics

Part of the book series: Springer Series in Solid-State Sciences ((SSSOL,volume 71))

Abstract

The magnetoresistance components pxxand pxy of modulation doped p-type GaAs-(GaAl )As heterojuncti ons were investigated between 50 mK and 4.2 K in magnetic fields B up to 12.5 T and in the temperature range of 400mK to 4.2K in fields up to 21 T. The high quality samples had hole mobilities up to 2.2×105 cm2/Vs and a carrier concentration around 2.3−2.5×1011/cm2 at the lowest temperature employed. Pronounced Shubnikov-de Haas oscillations and well-developed Hall plateaus were observed, especially at temperatures below 300 mK. Both the integral and the fractional quantum Hall-effect showed up with well-resolved steps in pxy at 50 mK. Plateaus with fractions with odd and even denominators were seen.

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Author information

Authors and Affiliations

  1. Physikalisches Institut der Universität Würzburg, D-8700, Würzburg, Fed. Rep. of Germany

    G. Reményi, G. Landwehr & W. Heuring

  2. Forschungsinstitut der Deutschen Bundespost, D-6100, Darmstadt, Fed. Rep. of Germany

    G. Weimann & W. Schlapp

Authors
  1. G. Reményi
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  2. G. Landwehr
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  3. W. Heuring
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  4. G. Weimann
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  5. W. Schlapp
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Editor information

Editors and Affiliations

  1. Physikalisches Institut, Universität Würzburg, Röntgenring 8, D-8700, Würzburg, Fed. Rep.of Germany

    Gottfried Landwehr

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© 1987 Springer-Verlag Berlin Heidelberg

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Reményi, G., Landwehr, G., Heuring, W., Weimann, G., Schlapp, W. (1987). Fractional Quantum Hall Effect of p-Type GaAs-(GaAl)As Heterostructures in the Millikelvin Range. In: Landwehr, G. (eds) High Magnetic Fields in Semiconductor Physics. Springer Series in Solid-State Sciences, vol 71. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-642-83114-0_25

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  • DOI: https://doi.org/10.1007/978-3-642-83114-0_25

  • Publisher Name: Springer, Berlin, Heidelberg

  • Print ISBN: 978-3-642-83116-4

  • Online ISBN: 978-3-642-83114-0

  • eBook Packages: Springer Book Archive

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