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Activation Energies of the Fractional Quantum Hall Effect in GaAs/ AlGaAs Heterostructures

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High Magnetic Fields in Semiconductor Physics

Part of the book series: Springer Series in Solid-State Sciences ((SSSOL,volume 71))

Abstract

There has been considerable progress in understanding the fractional quantum Hall effect (FQHE) since the first observation by TSUI et al. [1] in a two-dimensional electron system of a GaAs/AlGaAs heterostructure. The phenomenon is characterized by formation of a plateau in the Hall resistivity pxy and concurrent vanishing of the diagonal resistivity pxx similar to the (integral) quantum Hall effect [2] except that the filling factor becomes a fractional number p/q, where q is an odd integer and p is an integer prime to q. The fractional filling vactor v is defined by v = Nsh/eB where Ns is the electron number density and eB/h is the degeneracy of a Landau level. The temperature dependence of pxx and pxy observed experimentally at fractional filling suggests to us the existence of a finite energy gap between the ground state and the lowest excited state.

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Authors and Affiliations

  1. Department of Physics, Gakushuin University, Mejiro, Toshima-ku, Tokyo 171, Japan

    J. Wakabayashi

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  1. J. Wakabayashi
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Editors and Affiliations

  1. Physikalisches Institut, Universität Würzburg, Röntgenring 8, D-8700, Würzburg, Fed. Rep.of Germany

    Gottfried Landwehr

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Wakabayashi, J. (1987). Activation Energies of the Fractional Quantum Hall Effect in GaAs/ AlGaAs Heterostructures. In: Landwehr, G. (eds) High Magnetic Fields in Semiconductor Physics. Springer Series in Solid-State Sciences, vol 71. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-642-83114-0_24

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  • DOI: https://doi.org/10.1007/978-3-642-83114-0_24

  • Publisher Name: Springer, Berlin, Heidelberg

  • Print ISBN: 978-3-642-83116-4

  • Online ISBN: 978-3-642-83114-0

  • eBook Packages: Springer Book Archive

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