Abstract
A description is given of the occurrence of fractional quantum effects, and how these are influenced by the presence of disorder. It is shown that, when electrons are photoexcited into a GaAs-GaAIAs heterojunction, the fractional state existing at a Landau level occupancy of 7/5 can dominate over that at 4/3. Activation energy measurements of the resistivity show how the energy gap of the fractional states is reduced by the presence of disorder. A new method of analysis of the resistivity minima is presented which is used to give information on the correlation length of the many-body ground state.
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Nicholas, R.J. et al. (1987). Recent Advances in the Study of the Fractional Quantum Hall Effect. In: Landwehr, G. (eds) High Magnetic Fields in Semiconductor Physics. Springer Series in Solid-State Sciences, vol 71. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-642-83114-0_23
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DOI: https://doi.org/10.1007/978-3-642-83114-0_23
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