Abstract
A new model is proposed to explain important experimental results on the Quantum Hall effect. The existence of plateaus in the Hall resistance and broad minima in the magnetoresistance can be explained without explicit reference to localized electron states. The main assumption is a moderate inhomogeneity in the electron density across the width of the sample. Earlier experiments on the distribution of the Hall voltage across the sample can be explained when a gradient in the electron density is assumed.
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Woltjer, R., Eppenga, R., Schuurmans, M.F.H. (1987). A New Approach to the Quantum Hall Effect. In: Landwehr, G. (eds) High Magnetic Fields in Semiconductor Physics. Springer Series in Solid-State Sciences, vol 71. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-642-83114-0_16
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DOI: https://doi.org/10.1007/978-3-642-83114-0_16
Publisher Name: Springer, Berlin, Heidelberg
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