Abstract
The non-spherical model-potential study on group-IV, sp3-hybridized micro-clusters has revealed that there are two different series for sp3 clusters, crystalline series and amorphous series. Starting from the model potential structures, we have investigated electronic states of several typical silicon clusters based on the Bond-Orbital Model and the LCAO-Xα method. The Bond-Orbital-Model study shows that surface-dangling-bond states concentrate on the Fermi level in every cluster. This may cause the reconstructions of the silicon clusters from the sp3 structures. LCAO-Xα Of-force calculations on Si5 and Si10 of crystalline series have shown the presence of the common reconstruction mechanism named “triangle contruction.” On the other hand, the structural deviations of Si5 and Si20 of amorphous series are found to be small as long as their symmetries are conserved.
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Saito, S., Ohnishi, S. (1987). Electronic and Structural Theory of Group-IV Microclusters. In: Sugano, S., Nishina, Y., Ohnishi, S. (eds) Microclusters. Springer Series in Materials Science, vol 4. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-642-83064-8_34
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DOI: https://doi.org/10.1007/978-3-642-83064-8_34
Publisher Name: Springer, Berlin, Heidelberg
Print ISBN: 978-3-642-83066-2
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