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Monte-Carlo Simulation of the Effects Induced by Real-Space Transfer in a HEMT

  • M. Mouis
  • P. Dolfus
  • B. Mougel
  • J.-F. Pône
  • R. Castagné
Part of the Springer Series in Electronics and Photonics book series (SSEP, volume 22)

Abstract

In a HEMT (High Electron Mobility Transistor), electron conduction occurs within the accumulated layer confined against the interfacial hetero-barrier. So, the device behavior is similar to MOST behavior if the large gap semiconductor upper layer is considered as an insulating layer. Nevertheless, the technology used to grow this layer allows for a greater interface quality than in the classical MOS transistor. Furthermore, non-stationary transport phenomena are favoured by the small channel length of the HEMT’s. When heated by the drain electric field, the carriers can gain enough energy to step over the low (about 0.3.eV) hetero-barrier. This is called real-space transfer/1/.

Keywords

Barrier Height Drain Current Negative Differential Resistance High Electron Mobility Transistor Drain Characteristic 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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References

  1. 1.
    See for example: K. Hess, in proceedings of ICPS 16, Montpellier, (North-Holland, 1982 ) p. 723Google Scholar
  2. 2.
    P. Resto, J.-F. Pône, M. Mouis, J.-L. Pelouard, R. Castagné, in proceedings of NASECODE IV Conference, Dublin (Boole Press, Dublin,1985)Google Scholar
  3. 3.
    M. Mouis, J.-F. Pône, P. Resto, R. Castagné, Cornell Conference on advanced concepts in high - speed semiconductor devices and circuits, July 1985Google Scholar
  4. 4.
    S. Luryi, A. Kastalsky, in proceedings of 4th International Conference on Hot Electrons in Semiconductors, Innsbruck, (North-Holland, 1985 ) p. 453Google Scholar

Copyright information

© Springer-Verlag Berlin Heidelberg 1986

Authors and Affiliations

  • M. Mouis
    • 1
  • P. Dolfus
    • 1
  • B. Mougel
    • 1
  • J.-F. Pône
    • 1
  • R. Castagné
    • 1
  1. 1.Institut d’Electronique FondamentaleUniversité Paris XIOrsay CedexFrance

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