Monte-Carlo Simulation of the Effects Induced by Real-Space Transfer in a HEMT
In a HEMT (High Electron Mobility Transistor), electron conduction occurs within the accumulated layer confined against the interfacial hetero-barrier. So, the device behavior is similar to MOST behavior if the large gap semiconductor upper layer is considered as an insulating layer. Nevertheless, the technology used to grow this layer allows for a greater interface quality than in the classical MOS transistor. Furthermore, non-stationary transport phenomena are favoured by the small channel length of the HEMT’s. When heated by the drain electric field, the carriers can gain enough energy to step over the low (about 0.3.eV) hetero-barrier. This is called real-space transfer/1/.
KeywordsBarrier Height Drain Current Negative Differential Resistance High Electron Mobility Transistor Drain Characteristic
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- 1.See for example: K. Hess, in proceedings of ICPS 16, Montpellier, (North-Holland, 1982 ) p. 723Google Scholar
- 2.P. Resto, J.-F. Pône, M. Mouis, J.-L. Pelouard, R. Castagné, in proceedings of NASECODE IV Conference, Dublin (Boole Press, Dublin,1985)Google Scholar
- 3.M. Mouis, J.-F. Pône, P. Resto, R. Castagné, Cornell Conference on advanced concepts in high - speed semiconductor devices and circuits, July 1985Google Scholar
- 4.S. Luryi, A. Kastalsky, in proceedings of 4th International Conference on Hot Electrons in Semiconductors, Innsbruck, (North-Holland, 1985 ) p. 453Google Scholar