Monte-Carlo Simulation of the Effects Induced by Real-Space Transfer in a HEMT

Abstract

In a HEMT (High Electron Mobility Transistor), electron conduction occurs within the accumulated layer confined against the interfacial hetero-barrier. So, the device behavior is similar to MOST behavior if the large gap semiconductor upper layer is considered as an insulating layer. Nevertheless, the technology used to grow this layer allows for a greater interface quality than in the classical MOS transistor. Furthermore, non-stationary transport phenomena are favoured by the small channel length of the HEMT’s. When heated by the drain electric field, the carriers can gain enough energy to step over the low (about 0.3.eV) hetero-barrier. This is called real-space transfer/1/.