Abstract
Several optoelectronic approaches have been proposed for measuring the high-speed transient response of electronic devices and circuits [1]–[4]. Most of these approaches, however, cannot be used to perform on-chip measurements of silicon-integrated circuits because of process incompatibilities. This paper describes measurements and analysis of integrated polycrystalline-silicon photoconductors (PCEs) that have been developed to perform high-speed measurements on silicon substrates.
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© 1986 Springer-Verlag Berlin Heidelberg
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Fitzpatrick, D.K., Bowman, D.R., Hammond, R.B. (1986). Characterization of On-Chip Polycrystalline Silicon Photoconductors. In: Källbäck, B., Beneking, H. (eds) High-Speed Electronics. Springer Series in Electronics and Photonics, vol 22. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-642-82979-6_45
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DOI: https://doi.org/10.1007/978-3-642-82979-6_45
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