GaAs Photoconductors to Characterize Picosecond Response in GaAs Integrated Devices and Circuits
Optoelectronic techniques that use femtosecond lasers and promise the precise measurement of transient response in high-speed electronic devices and circuits have been under study for several years. We have investigated on-wafer electrical-impulse generation and sampling using femtosecond-laser-excited GaAs photoconductors. This approach is applicable to any transmission line structure, it is directly integrable, noninvasive, jitter-free, and it is applicable to both microwave and digital circuits.
KeywordsTransmission Line Femtosecond Laser Test Structure Center Conductor Measurement Bandwidth
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