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GaAs Photoconductors to Characterize Picosecond Response in GaAs Integrated Devices and Circuits

  • R. B. Hammond
  • N. G. Paulter
  • A. J. Gibbs
Part of the Springer Series in Electronics and Photonics book series (SSEP, volume 22)

Abstract

Optoelectronic techniques that use femtosecond lasers and promise the precise measurement of transient response in high-speed electronic devices and circuits have been under study for several years. We have investigated on-wafer electrical-impulse generation and sampling using femtosecond-laser-excited GaAs photoconductors. This approach is applicable to any transmission line structure, it is directly integrable, noninvasive, jitter-free, and it is applicable to both microwave and digital circuits.

Keywords

Transmission Line Femtosecond Laser Test Structure Center Conductor Measurement Bandwidth 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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Reference

  1. [1]
    D. H. Auston, “Impulse response of photoconductors in transmission lines,” IEEE J. Quantum Electron., Vol. GE-19, pp. 639–648, 1983.CrossRefGoogle Scholar

Copyright information

© Springer-Verlag Berlin Heidelberg 1986

Authors and Affiliations

  • R. B. Hammond
    • 1
  • N. G. Paulter
    • 1
  • A. J. Gibbs
    • 1
  1. 1.Los Alamos National LaboratoryLos AlamosUSA

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