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Tunneling Through III–V Low-Barrier Heterostructures

  • P. Guéret
  • A. Baratoff
  • S. Bending
  • H. Meier
  • E. Marclay
  • M. Py
Part of the Springer Series in Electronics and Photonics book series (SSEP, volume 22)

Abstract

This paper deals with tunnelling through very low and thick Al x Ga 1−x As barriers. E xperimental results are presented and compared with theory. Measurements in a transverse magnetic field are also described, and their relationship to the tunnelling time discussed. They provide further confirmation of direct, “ballistic” tunnelling through thick barriers.

Keywords

Barrier Height Transmission Coefficient Tunnel Current Transverse Magnetic Field Spin Precession 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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Copyright information

© Springer-Verlag Berlin Heidelberg 1986

Authors and Affiliations

  • P. Guéret
    • 1
  • A. Baratoff
    • 1
  • S. Bending
    • 1
  • H. Meier
    • 1
  • E. Marclay
    • 2
  • M. Py
    • 2
  1. 1.IBM Zurich Research LaboratoryRüschlikonSwitzerland
  2. 2.Institute for MicroelectronicsSwiss Federal Institute of TechnoloyLausanneSwitzerland

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