Tunneling Through III–V Low-Barrier Heterostructures

  • P. Guéret
  • A. Baratoff
  • S. Bending
  • H. Meier
  • E. Marclay
  • M. Py
Conference paper
Part of the Springer Series in Electronics and Photonics book series (SSEP, volume 22)

Abstract

This paper deals with tunnelling through very low and thick Al x Ga 1−x As barriers. E xperimental results are presented and compared with theory. Measurements in a transverse magnetic field are also described, and their relationship to the tunnelling time discussed. They provide further confirmation of direct, “ballistic” tunnelling through thick barriers.

Keywords

GaAs 

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Copyright information

© Springer-Verlag Berlin Heidelberg 1986

Authors and Affiliations

  • P. Guéret
    • 1
  • A. Baratoff
    • 1
  • S. Bending
    • 1
  • H. Meier
    • 1
  • E. Marclay
    • 2
  • M. Py
    • 2
  1. 1.IBM Zurich Research LaboratoryRüschlikonSwitzerland
  2. 2.Institute for MicroelectronicsSwiss Federal Institute of TechnoloyLausanneSwitzerland

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