Lattice-Strained Double Heterojunction InGaAs/GaAs Bipolar Transistors
A study of a series of NpN GaAs/InGaAs/GaAs latticestrained heterojunction bipolar transistors, in which the indium mole fraction has been varied, shows that it is possible to obtain good dc current gain and a high cut-off frequency in this materials system despite relatively small band offsets and the presence of interface lattice irregularities.
KeywordsMinority Carrier Misfit Dislocation Rutherford Backscattering Spectroscopy Current Gain Injection Efficiency
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- 3.P.M. Enquist, L.P. Ramberg, F.E. Najjar, and L.F. Eastman: to appear in Appl.Phys.Lett.Google Scholar