Abstract
A study of a series of NpN GaAs/InGaAs/GaAs latticestrained heterojunction bipolar transistors, in which the indium mole fraction has been varied, shows that it is possible to obtain good dc current gain and a high cut-off frequency in this materials system despite relatively small band offsets and the presence of interface lattice irregularities.
Keywords
- Minority Carrier
- Misfit Dislocation
- Rutherford Backscattering Spectroscopy
- Current Gain
- Injection Efficiency
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Ramberg, L.P. et al. (1986). Lattice-Strained Double Heterojunction InGaAs/GaAs Bipolar Transistors. In: Källbäck, B., Beneking, H. (eds) High-Speed Electronics. Springer Series in Electronics and Photonics, vol 22. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-642-82979-6_34
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DOI: https://doi.org/10.1007/978-3-642-82979-6_34
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