Lattice-Strained Double Heterojunction InGaAs/GaAs Bipolar Transistors

  • L. P. Ramberg
  • P. M. Enquist
  • Y. K. Chen
  • F. E. Najjar
  • L. F. Eastman
  • E. A. Fitzgerald
  • K. L. Kavanagh
Conference paper
Part of the Springer Series in Electronics and Photonics book series (SSEP, volume 22)

Abstract

A study of a series of NpN GaAs/InGaAs/GaAs latticestrained heterojunction bipolar transistors, in which the indium mole fraction has been varied, shows that it is possible to obtain good dc current gain and a high cut-off frequency in this materials system despite relatively small band offsets and the presence of interface lattice irregularities.

Keywords

Microwave Recombination GaAs Auger Channeling 

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Copyright information

© Springer-Verlag Berlin Heidelberg 1986

Authors and Affiliations

  • L. P. Ramberg
    • 1
    • 2
  • P. M. Enquist
    • 1
  • Y. K. Chen
    • 1
  • F. E. Najjar
    • 1
  • L. F. Eastman
    • 1
  • E. A. Fitzgerald
    • 3
  • K. L. Kavanagh
    • 3
  1. 1.School of Electrical EngineeringCornell UniversityIthacaUSA
  2. 2.Department of Electron Physics IChalmers UniversityGothenburgSweden
  3. 3.Department of Materials Science and EngineeringCornell UniversityIthacaUSA

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