Abstract
The transport properties of non-equilibrium electrons in GaAs Hot Electron Transistors has been successfully probed using Hot Electron Spectroscopy, and explained in terms of a fully coupled electron-phonon system. The mean free path, for a non-equilibrium electron is shown to be critically dependent on the electron concentration in the base region enabling us to conclude that GaAs is unsuitable for the fabrication of a useful Hot Electron Transistor. It is suggested that a semiconductor with a small effective mass or a two dimensional system in the base would show improved performance.
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References
J. M. Shannon, Appl. Phys. Lett., Vol. 35, pp. 63–65, 1979.
R. J. Malik, T. R. AuCoin, R. L. ‘Ross, K. Board, C. E. C. Wood and L. F. Eastman, Elec. Lett., Vol. 16, pp. 836–838, 1980.
S. Muto, K. Imamuwa, N. Yokoyama, S. Hiyanizu and H. Nishi, Elec. Letts., Vol. 21, pp. 555–556, 1985.
J. M. Woodcock, J. J. Harris and J. M. Shannon, Physica, Vol. 134B, pp. 111–118, 1985.
M. Heiblum, D. C. Thomas, C. M. Knoedler and M. I. Nathan, Appl. Phys. Letts., Vol. 47, pp. 1105–1107, 1985.
J. R. Hayes, A. F. J. Levi and W. Weigmann, Electron Lett., Vol. 20, pp. 851–852, 1984.
J. R. Hayes, A. F. J. Levi and W. Wiegmann, Phys. Rev. Lett., Vol. 54, pp. 1570–4572, 1985.
A. F. J. Levi, J. R. Hayes, P. M. Platzman and W. Weigmann, Phys. Rev. Lett., Vol. 55, pp. 2071–2073, 1985.
M. Heiblum, M. J. Nathan, D. C. Thomas and C. M. Knoedler, Phys. Rev. Lett., Vol. 55, pp. 2200–2203, 1985.
A. F. J. Levi, J. R. Hayes, P. M. Platzman and W. Weigmann, Physica, Vol. 134B, pp. 480–486, 1985.
J. S. Blakemore, J. Appl. Phys. Vol. 53, pp. R123–181, 1982.
M. Glicksman and M. C. Steele, Phys. Rev., Vol. 110, pp. 1204–1205, 1958.
R. Dingle, H. L. Störmer, A. C. Gossard and W. Wiegmann, Appl. Phys. Lett., Vol. 33, pp. 665–667, 1978.
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© 1986 Springer-Verlag Berlin Heidelberg
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Hayes, J.R., Levi, A.F.J., Gossard, A.C., English, J.H. (1986). Hot Electron Transistors. In: Källbäck, B., Beneking, H. (eds) High-Speed Electronics. Springer Series in Electronics and Photonics, vol 22. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-642-82979-6_3
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DOI: https://doi.org/10.1007/978-3-642-82979-6_3
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Online ISBN: 978-3-642-82979-6
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