Excess Gate Current Due to Hot Electrons in GaAs-Gate FETs

  • D. J. Frank
  • P. M. Solomon
  • D. C. La TulipeJr.
  • H. Baratte
  • C. M. Knoedler
  • S. L. Wright
Part of the Springer Series in Electronics and Photonics book series (SSEP, volume 22)

Abstract

We report on the first observations of hot electron effects in the gate current of GaAs-gate FET’s. We have made and tested a variety of these FET’s using MBE-grown material with 60nm and 35nm thick Al.4Ga.6As gate insulator layers. In measurements at 300K and 77K these devices show drain-voltage-dependent gate current substantially exceeding that which would be expected on the basis of simple vertical transport measurements. We attribute this current to the real-space transfer of hot electrons from the channel of the device into the (Al,Ga)As/GaAs barrier, from which they are collected into the gate.

Keywords

GaAs 

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Copyright information

© Springer-Verlag Berlin Heidelberg 1986

Authors and Affiliations

  • D. J. Frank
    • 1
  • P. M. Solomon
    • 1
  • D. C. La TulipeJr.
    • 1
  • H. Baratte
    • 1
  • C. M. Knoedler
    • 1
  • S. L. Wright
    • 1
  1. 1.IBM Thomas J. Watson Research CenterYorktown HeightsUSA

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