Excess Gate Current Due to Hot Electrons in GaAs-Gate FETs
We report on the first observations of hot electron effects in the gate current of GaAs-gate FET’s. We have made and tested a variety of these FET’s using MBE-grown material with 60nm and 35nm thick Al.4Ga.6As gate insulator layers. In measurements at 300K and 77K these devices show drain-voltage-dependent gate current substantially exceeding that which would be expected on the basis of simple vertical transport measurements. We attribute this current to the real-space transfer of hot electrons from the channel of the device into the (Al,Ga)As/GaAs barrier, from which they are collected into the gate.
KeywordsGate Voltage Gate Length Negative Differential Resistance Drain Voltage Gate Current
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- 1.P. M. Solomon, C. M. Knoedler and S. L. Wright: IEEE Elec. Dev. Lett., EDL-5, 379 (1984)Google Scholar
- 3.M S. Shur, D. K. Arch, R. R. Daniels and J. K. Abrokwah: IEEE Elec. Dev. Lett., EDL-7, 78 (1986)Google Scholar
- 5.A. Kastalsky, S. Luryi, A. C. Gossard and R. Hendel: IEEE Elec. Dev. Lett., EDL-5, 57 (1984)Google Scholar
- 6.J. Y.-F. Tang: IEEE Trans. Elec. Dev., ED-32, 1817 (1985)Google Scholar