Impact Ionization Breakdown of GaAs Current Limiters

  • K. Lehovec
Conference paper
Part of the Springer Series in Electronics and Photonics book series (SSEP, volume 22)


Breakdown in GaAs saturated drift velocity resistors is attributed to incipient electron-hole pair generation by electron impact. Transit of the holes leads to a non-uniform field distribution and a breakdown I-V which has been analyzed quantitatively.


Electron Content Electron Drift Velocity Single Event Upset Breakdown Phenomenon Negative Space Charge 
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Copyright information

© Springer-Verlag Berlin Heidelberg 1986

Authors and Affiliations

  • K. Lehovec
    • 1
  1. 1.Departments of Electrical Engineering and Materials ScienceUniversity of Southern CaliforniaLos AngelesUSA

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