Impact Ionization Breakdown of GaAs Current Limiters

  • K. Lehovec
Conference paper
Part of the Springer Series in Electronics and Photonics book series (SSEP, volume 22)

Abstract

Breakdown in GaAs saturated drift velocity resistors is attributed to incipient electron-hole pair generation by electron impact. Transit of the holes leads to a non-uniform field distribution and a breakdown I-V which has been analyzed quantitatively.

Keywords

Microwave Recombination GaAs 

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References

  1. 1.
    K. Lehovec, R. Zuleeg: IEEE Trans. ED-27, 1074 (1980)Google Scholar
  2. 2.
    J. Roach, H. Wieder, R. Zuleeg: Workshop on Microwave Materials and Devices, San Francisco, California, January 10–13, 1986Google Scholar
  3. 3.
    A. Peczalski, A. Vander Ziel, R. Zuleeg: Solid-State Electron. 26, 861 (1983)CrossRefGoogle Scholar

Copyright information

© Springer-Verlag Berlin Heidelberg 1986

Authors and Affiliations

  • K. Lehovec
    • 1
  1. 1.Departments of Electrical Engineering and Materials ScienceUniversity of Southern CaliforniaLos AngelesUSA

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