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Impact Ionization Breakdown of GaAs Current Limiters

  • K. Lehovec
Conference paper
Part of the Springer Series in Electronics and Photonics book series (SSEP, volume 22)

Abstract

Breakdown in GaAs saturated drift velocity resistors is attributed to incipient electron-hole pair generation by electron impact. Transit of the holes leads to a non-uniform field distribution and a breakdown I-V which has been analyzed quantitatively.

Keywords

Electron Content Electron Drift Velocity Single Event Upset Breakdown Phenomenon Negative Space Charge 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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References

  1. 1.
    K. Lehovec, R. Zuleeg: IEEE Trans. ED-27, 1074 (1980)Google Scholar
  2. 2.
    J. Roach, H. Wieder, R. Zuleeg: Workshop on Microwave Materials and Devices, San Francisco, California, January 10–13, 1986Google Scholar
  3. 3.
    A. Peczalski, A. Vander Ziel, R. Zuleeg: Solid-State Electron. 26, 861 (1983)CrossRefGoogle Scholar

Copyright information

© Springer-Verlag Berlin Heidelberg 1986

Authors and Affiliations

  • K. Lehovec
    • 1
  1. 1.Departments of Electrical Engineering and Materials ScienceUniversity of Southern CaliforniaLos AngelesUSA

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