Abstract
Some years ago, hot electron transistors with high current gain and good power gain were made in silicon using ion implantation doping [1]. These monolithic hot electron transistors were based on the fact that the bulk unipolar diode, in particular the camel diode, is an efficient collector of hot electrons. In this case the hot electrons were generated using a reverse biased, barrier raised Schottky diode. The F T of these devices was ≈3 GHz and in good agreement with that calculated, the major factor determining F T being the charging time of the tunnel emitter. To improve the frequency response, a low capacitance unipolar diode emitter is required and the barrier heights of the unipolar diode have to be controlled very precisely.
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References
J.M. Shannon, J.A.G. Slatter: Jpn. J. Appl. Phys. 22, Sup. 22–1, 259 (1983)
S.J. Battersby, J.J. Harris: To be published in IEEE Trans.-ED
J.M. Shannon, M.J. King, B.J. Goldsmith, J.B. Clegg: Proc. 1st Int. Symposium Silicon MBE, Electrochem. Soc., Vol. 85–7, p. 242 (1985)
J.M. Woodcock, J.J. Marris, J.M. Shannon: Physica 134B, 111 (1985)
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© 1986 Springer-Verlag Berlin Heidelberg
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Shannon, J.M. (1986). High-Speed Bulk Unipolar Structures in Silicon. In: Källbäck, B., Beneking, H. (eds) High-Speed Electronics. Springer Series in Electronics and Photonics, vol 22. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-642-82979-6_22
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DOI: https://doi.org/10.1007/978-3-642-82979-6_22
Publisher Name: Springer, Berlin, Heidelberg
Print ISBN: 978-3-642-82981-9
Online ISBN: 978-3-642-82979-6
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