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Modelling of Mobility Degradation in Submicron MOSFETs After Electrical Stressing

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High-Speed Electronics

Part of the book series: Springer Series in Electronics and Photonics ((SSEP,volume 22))

Abstract

In submicron MOSFETs, aging effects increase because of the strong electrical field during the device operation. Hence, the strengthening of Channel Hot Electron injection (C. H. E) is well known to give rise to a higher degradation of transconductance and threshold voltages /1/. This type of degradation occurs for VG > VD and for normal values of VD corresponding to the MOSFET operation biases.

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References

  1. E. Takeda, A. Shimizu, T. p. 329.

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  2. Chu Hao, B. Cabon-Tlll, S 23 (1985) p. 1025.

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  3. B. Cabon-Till, G. Ghibaud p.305.

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  4. B. Gabon-Till, G. Ghlbaudo, 21 (1985) p. 457.

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  5. G. Ghlbaudo: Phys. Stat. Sol. Hagiwagara: IEEE-EDL4, 9 (1983) Crlstoloveanu, G. Ghlbaudo: SSE,(a), 95 (1986) p. 323.

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Author information

Authors and Affiliations

  1. Laboratoire de Physique des Composants à Semiconducteurs, UA-CNRS 840, ENSERG, 23 Av. des Martyrs, F-38031, Grenoble, France

    B. Cabon-Till & G. Ghibaudo

Authors
  1. B. Cabon-Till
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  2. G. Ghibaudo
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Editor information

Editors and Affiliations

  1. RIFA AB, S-163 81, Stockholm, Sweden

    Bengt Källbäck

  2. Institut für Halbleitertechnik, Rhein.-Westf. Technische Hochschule, Sommerfeldstraße, D-5100, Aachen, Fed. Rep. of Germany

    Heinz Beneking

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© 1986 Springer-Verlag Berlin Heidelberg

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Cabon-Till, B., Ghibaudo, G. (1986). Modelling of Mobility Degradation in Submicron MOSFETs After Electrical Stressing. In: Källbäck, B., Beneking, H. (eds) High-Speed Electronics. Springer Series in Electronics and Photonics, vol 22. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-642-82979-6_19

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  • DOI: https://doi.org/10.1007/978-3-642-82979-6_19

  • Publisher Name: Springer, Berlin, Heidelberg

  • Print ISBN: 978-3-642-82981-9

  • Online ISBN: 978-3-642-82979-6

  • eBook Packages: Springer Book Archive

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