Hot-Carrier-Excited Two-Dimensional Plasmon in Selectively Doped AlGaAs/GaAs Heterointerface Under High Electric Field Application

  • T. Kobayashi
  • N. Okisu
  • Y. Sambe
Conference paper
Part of the Springer Series in Electronics and Photonics book series (SSEP, volume 22)


The present paper describes the first observation of the 2D-plasmon in AlGaAs/GaAs heterointerface under the high field application. The FIR emission from the grating-coupled 2D-plasmon grew up to 30[μW/cm2] for the applied field of 760[V/cm]. The other related subjects such as the real-space transfer and 2D electron temperature are also demonstrated.


Plasmon Excitation Modify Dispersion Relation Epitaxial Wafer Field Intensity Increase A1GaAs Layer 
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Copyright information

© Springer-Verlag Berlin Heidelberg 1986

Authors and Affiliations

  • T. Kobayashi
    • 1
  • N. Okisu
    • 1
  • Y. Sambe
    • 1
  1. 1.Faculty of Engineering ScienceOsaka UniversityToyonaka, Osaka 560Japan

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