Hot-Carrier-Excited Two-Dimensional Plasmon in Selectively Doped AlGaAs/GaAs Heterointerface Under High Electric Field Application
The present paper describes the first observation of the 2D-plasmon in AlGaAs/GaAs heterointerface under the high field application. The FIR emission from the grating-coupled 2D-plasmon grew up to 30[μW/cm2] for the applied field of 760[V/cm]. The other related subjects such as the real-space transfer and 2D electron temperature are also demonstrated.
KeywordsPlasmon Excitation Modify Dispersion Relation Epitaxial Wafer Field Intensity Increase A1GaAs Layer
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