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Technical Issues of High-Speed Heterostructure Devices

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High-Speed Electronics

Part of the book series: Springer Series in Electronics and Photonics ((SSEP,volume 22))

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Abstract

Recently,heterostructure devices have been extensively investigated because of their superior properties and new applications. In addition, the development of new epitaxial techniques, such as molecular beam epitaxy (MBE) and metal organic chemical vapor deposition (MOCVD), have enabled precise control of thickness and doping in the fabrication of those devices. In this paper, relatively orthodox heterostructure devices are discussed from the technical and application points of view. First of all, current technical issues of heterostructure FETs (HFETs) /1/ directed at integrated circuits are described. Next, heterojunction bipolar transistors (HBTs) /2/ are discussed from the same point of view. Finally, current topics of semiconductor.laser diodes concerning fast direct modulation are presented.

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REFERENCES

  1. J. Drummond, W. T. Masselink, and H. Morkoc: Proc. IEEE 74, 773 (1986)

    Article  CAS  Google Scholar 

  2. H. Kroemer: Proc. IEEE 70, 13 (1982)

    Article  Google Scholar 

  3. T. Takada, N. Kato, and M. Ida: IEEE Electron Device Lett. ED-7, 47 (1986)

    Article  Google Scholar 

  4. N. J. Shah, S. S. Pei, C. W. Tu, and R. C. Tiberio: IEEE Trans. Electron Devices ED-33, 543 (1986)

    Article  Google Scholar 

  5. T. J. Drummond, H. Morkoc, K. Lee, and M. S. Shur: IEEE Electron Device Lett. EDL-3, 338 (1982)

    Article  Google Scholar 

  6. J. F. Rochette, P. Delescluse, M. Laviron, D. Delagebeaudeuf, F. Diamand, and J. Chevrier: Int. Symp. GaAs and Related Compounds, Inst. Phys. Conf. Ser. No. 65, 385 (1982)

    Google Scholar 

  7. T. J. Drummond, R. Fischer, W. Kopp, H. Morkoc, K. Lee, and M. S. Shur: IEEE Trans. Electron Devices, ED-30, 1806 (1983)

    Article  Google Scholar 

  8. A. van der Ziel: Solid-State Electron. 26, 385 (1983)

    Article  Google Scholar 

  9. T. J. Drummond, W. Kopp, D. Arnold, R. Fischer, H. Morkoc, L. P. Erickson, and P. W. Palmberg: Electron. Lett. 19, 986 (1983)

    Article  CAS  Google Scholar 

  10. Y. Katayama, M. Morioka, Y. Sawada, K. Ueyanagi, T. Mishima, Y. Ono, T. Usagawa, and Y. Shiraki: Jpn. J. Appl. Phys. 23, L150 (1984)

    Article  Google Scholar 

  11. K. Matsumoto, M. Ogura, T. Wada; N. Hashizume, T. Yao, and Y. Hayashi: Electron. Lett. 20, 462 (1984)

    Article  CAS  Google Scholar 

  12. P. M. Solomon, C. M. Knoedler, S. L. Wright: IEEE Electron Device Lett. EDL-5, 379 (1984)

    Article  Google Scholar 

  13. K. Arai, T. Mizutani, F. Yanagawa: Int. Symp. GaAs and Related Compounds, Inst. Phys. Conf. Ser. No. 79, 631 (1985)

    Google Scholar 

  14. K. Maezawa, T. Mizutani, K. Arai, and F. Yanagawa: IEEE Electron Device Lett. EDL-7, 454 (1986)

    Article  Google Scholar 

  15. T. Mizutani, S. Fujita, F. Yanagawa: Int. Syrtis. GaAs and Related Compounds, Inst. Phys. Conf. Ser. No 79, 733 (1985)

    Google Scholar 

  16. P. M. Asbeck, D. L. Miller, R. J. Anderson, R. N. Deming, R. T. Chen, C. A. Liechti, and F. H. Eisen: Tech. Dig. 1984 GaAs IC Symp., 100 (1984)

    Google Scholar 

  17. H. D. Shih, S.E. Matteson, W. V. McLevige, and H. T. Yuan: J. Vac. Sci. Technol. B3, 793 (1984)

    Google Scholar 

  18. H. Ito and T. Ishibashi: Jpn. J. Appl. Phys. 24, 1567 (1985)

    Article  CAS  Google Scholar 

  19. H. Ito and T. Ishibashi: Inst. Phys. Conf. Ser. No. 79, 607 (1985)

    Google Scholar 

  20. J. R. Hayes, F. Capasso, A. C. Gossard, R. J. Malik, and W. Wiegmann: Electron. Lett. 19, 410 (1983)

    Article  CAS  Google Scholar 

  21. O. Nakajima, K. Nagata, H. Itoh, T. Ishibashi, and T. Sugeta: Jpn. J. Appl. Phys. 24, 1368 (1985)

    Article  CAS  Google Scholar 

  22. K. Nagata, 0. Nakajima, Y. Yamauchi, and T. Ishibashi: Int. Symp. GaAs and Related Compounds,Inst. Phys. Conf. Ser. No. 79, 589 1985 )

    Google Scholar 

  23. M. F. Chang, P. M. Asbeck, D. L. Miller, and K. C. Wang: IEEE Electron Device Lett. EDL-7, 8 (1986)

    Article  Google Scholar 

  24. K.-Morizuka,,K. Tsuda, T. Kobayashi, and M. Azuma: presented at the 44th Device Res. Conf. (1986)

    Google Scholar 

  25. K. Nagata, 0. Nakajima, and T. Ishibashi: Jpn. J. Appl. Phys. 25, L510 (1986)

    Article  CAS  Google Scholar 

  26. G. J. Sullivian, P. M. Asbeck, M. F. Chang, D. L. Miller, and K. C. Wang: presented at the 44th Device Res. Conf. (1986)

    Google Scholar 

  27. K. Y. Lau and A. Yariv: IEEE J. Quant. Electron. QE-21, 121 (1985)

    Article  Google Scholar 

  28. T. Ikegami and Y. Suematu: IEEE J. Quant. Electron. QE-4, 148 (1968)

    Article  Google Scholar 

  29. J. E. Bowers’and C. A. Burrus: Conf. on Lasers and Electro-Optics, THH1 (1986)

    Google Scholar 

  30. R. Olshansky and C. B. Su: Conf. on Optical Fiber Comm., WBB1 (1986)

    Google Scholar 

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© 1986 Springer-Verlag Berlin Heidelberg

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Ikegami, T., Yamasaki, K., Mizutani, T., Ishibashi, T., Fujimoto, M. (1986). Technical Issues of High-Speed Heterostructure Devices. In: Källbäck, B., Beneking, H. (eds) High-Speed Electronics. Springer Series in Electronics and Photonics, vol 22. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-642-82979-6_13

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  • DOI: https://doi.org/10.1007/978-3-642-82979-6_13

  • Publisher Name: Springer, Berlin, Heidelberg

  • Print ISBN: 978-3-642-82981-9

  • Online ISBN: 978-3-642-82979-6

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