Abstract
Recently,heterostructure devices have been extensively investigated because of their superior properties and new applications. In addition, the development of new epitaxial techniques, such as molecular beam epitaxy (MBE) and metal organic chemical vapor deposition (MOCVD), have enabled precise control of thickness and doping in the fabrication of those devices. In this paper, relatively orthodox heterostructure devices are discussed from the technical and application points of view. First of all, current technical issues of heterostructure FETs (HFETs) /1/ directed at integrated circuits are described. Next, heterojunction bipolar transistors (HBTs) /2/ are discussed from the same point of view. Finally, current topics of semiconductor.laser diodes concerning fast direct modulation are presented.
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Ikegami, T., Yamasaki, K., Mizutani, T., Ishibashi, T., Fujimoto, M. (1986). Technical Issues of High-Speed Heterostructure Devices. In: Källbäck, B., Beneking, H. (eds) High-Speed Electronics. Springer Series in Electronics and Photonics, vol 22. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-642-82979-6_13
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DOI: https://doi.org/10.1007/978-3-642-82979-6_13
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