Abstract
This paper describes some of the heterostructure devices, including the high electron mobility transistor (HEMT),-the hot electron transistor (HET), and the resonant-tunneling hot electron transistor (RHET). This is followed by a discussion of transport characteristics in the RHET, with special attention given to the resonant tunneling barrier (RTB) used as the emitter barrier of the RHET.
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Muto, S., Hiyamizu, S., Yokoyama, N. (1986). Transport Characteristics in Heterostructure Devices. In: Källbäck, B., Beneking, H. (eds) High-Speed Electronics. Springer Series in Electronics and Photonics, vol 22. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-642-82979-6_12
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DOI: https://doi.org/10.1007/978-3-642-82979-6_12
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